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Volumn , Issue , 2003, Pages 282-286

A physical model of time-dependent dielectric breakdown in copper metallization

Author keywords

"E" model; Copper diffusion; Copper metallization; Reliability; TDDB lifetime

Indexed keywords

COPPER; DIFFUSION; METALLIZING; STRESS ANALYSIS; THERMAL EFFECTS;

EID: 0038310066     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (28)

References (17)
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    • R. Tsu, J.W. McPherson, and W.R. McKee, "Leakage and Breakdown Reliability Issues Associated with Low-k Dielectrics in a Dual-Damascene Cu Process", IEEE-IRPS '2000 Proceedings, 2000, p. 348.
    • (2000) IEEE-IRPS '2000 Proceedings , pp. 348
    • Tsu, R.1    McPherson, J.W.2    McKee, W.R.3
  • 4
    • 0031680437 scopus 로고    scopus 로고
    • Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
    • K.Takeda, K. Hinode, I. Oodake, N. Oohashi, and H. Yamaguchi, "Enhanced Dielectric Breakdown Lifetime of the Copper/Silicon Nitride/Silicon Dioxide Structure", IEEE-IRPS '1998 Proceedings, 1998, p.36.
    • (1998) IEEE-IRPS '1998 Proceedings , pp. 36
    • Takeda, K.1    Hinode, K.2    Oodake, I.3    Oohashi, N.4    Yamaguchi, H.5
  • 8
    • 0027886510 scopus 로고
    • Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for (Si) mod Cu metallizations
    • J.S. Reid, E. Kolawa, R.P. Ruiz, and M.-A. Nicolet, "Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for (Si) mod Cu metallizations", Thin Solid Films, Vol. 236, 1993, p. 319.
    • (1993) Thin Solid Films , vol.236 , pp. 319
    • Reid, J.S.1    Kolawa, E.2    Ruiz, R.P.3    Nicolet, M.-A.4
  • 9
    • 0000507429 scopus 로고
    • Performance of tantalum-silicon-nitride diffusion barrier between copper and silicon dioxide
    • M.S. Angyal, Y. Shacham-Diamand, J.S. Reid, and M.-A. Nicolet, "Performance of tantalum-silicon-nitride diffusion barrier between copper and silicon dioxide", Applied Physics Letters, Vol. 67, 1995, p. 2152.
    • (1995) Applied Physics Letters , vol.67 , pp. 2152
    • Angyal, M.S.1    Shacham-Diamand, Y.2    Reid, J.S.3    Nicolet, M.-A.4
  • 10
    • 0000316272 scopus 로고
    • Sputtering of tantalum-based diffusion barriers in Si/Cu metallization: Effects of gas pressure and composition
    • M. Stavrev, C. Wenzel, A. Moller, and K. Drescher, "Sputtering of tantalum-based diffusion barriers in Si/Cu metallization: Effects of gas pressure and composition", Applied Surface Science, Vol. 91, 1995, p. 257.
    • (1995) Applied Surface Science , vol.91 , pp. 257
    • Stavrev, M.1    Wenzel, C.2    Moller, A.3    Drescher, K.4
  • 12
    • 84971922594 scopus 로고
    • Barriers against copper diffusion into silicon and drift through silicon dioxide
    • S.-Q. Wang, "Barriers against copper diffusion into silicon and drift through silicon dioxide", MRS Bull, Vol. 8, 1994, p.30.
    • (1994) MRS Bull , vol.8 , pp. 30
    • Wang, S.-Q.1
  • 15
    • 0034428735 scopus 로고    scopus 로고
    • Time-dependent-dielectric breakdown used to assess copper contamination impact on inter-level dielectric reliability
    • R. Gonella, P. Motte, and J. Torres, "Time-dependent-dielectric breakdown used to assess copper contamination impact on inter-level dielectric reliability", IEEE '2000 IRW Final Report, 2000, p. 189.
    • (2000) IEEE '2000 IRW Final Report , pp. 189
    • Gonella, R.1    Motte, P.2    Torres, J.3
  • 16
    • 0000179930 scopus 로고
    • Copper diffusion in amorphous thin films of 4% phosphorous-silicon glass and hydrogenated silicon nitride
    • D. Gupta, K. Vieregge, and K. V. Srikrishnan, "Copper diffusion in amorphous thin films of 4% phosphorous-silicon glass and hydrogenated silicon nitride", Applied Physics Letter, Vol. 61, 1992, p. 2178.
    • (1992) Applied Physics Letter , vol.61 , pp. 2178
    • Gupta, D.1    Vieregge, K.2    Srikrishnan, K.V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.