-
1
-
-
0033743064
-
Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process
-
R. Tsu, J.W. McPherson, and W.R. McKee, "Leakage and Breakdown Reliability Issues Associated with Low-k Dielectrics in a Dual-Damascene Cu Process", IEEE-IRPS '2000 Proceedings, 2000, p. 348.
-
(2000)
IEEE-IRPS '2000 Proceedings
, pp. 348
-
-
Tsu, R.1
McPherson, J.W.2
McKee, W.R.3
-
2
-
-
0029325536
-
Diffusion of copper through dielectric films under bias temperature stress
-
G. Raghavan, C. Chiang, P.B. Anders, S. Tzeng, R. Villasol, G. Bai, M. Bohr, and D.B. Fraser, "Diffusion of copper through dielectric films under bias temperature stress", Thin Solid Films, Vol. 262, 1995, p. 168.
-
(1995)
Thin Solid Films
, vol.262
, pp. 168
-
-
Raghavan, G.1
Chiang, C.2
Anders, P.B.3
Tzeng, S.4
Villasol, R.5
Bai, G.6
Bohr, M.7
Fraser, D.B.8
-
3
-
-
0030100375
-
2
-
2", Jpn. J. Appl. Phys., Vol. 35, 1996, p.1685.
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
, pp. 1685
-
-
Miyazaki, H.1
Hinode, K.2
Homma, Y.3
Kobayashi, N.4
-
4
-
-
0031680437
-
Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
-
K.Takeda, K. Hinode, I. Oodake, N. Oohashi, and H. Yamaguchi, "Enhanced Dielectric Breakdown Lifetime of the Copper/Silicon Nitride/Silicon Dioxide Structure", IEEE-IRPS '1998 Proceedings, 1998, p.36.
-
(1998)
IEEE-IRPS '1998 Proceedings
, pp. 36
-
-
Takeda, K.1
Hinode, K.2
Oodake, I.3
Oohashi, N.4
Yamaguchi, H.5
-
5
-
-
84891420150
-
Impact of low-K dielectrics and barrier metals on TDDB lifetime of Cu interconnects
-
J. Noguchi, T. Saito, N. Ohashi, H. Ashihara, H. Maruyama, M. kubo, H. Yamaguchi, D. Ryuzaki, K. Takeda, and K. Hinode, "Impact of Low-K Dielectrics and Barrier Metals on TDDB Lifetime of Cu Interconnects", IEEE-IRPS '2001 Proceedings, 2001, p.355.
-
(2001)
IEEE-IRPS '2001 Proceedings
, pp. 355
-
-
Noguchi, J.1
Saito, T.2
Ohashi, N.3
Ashihara, H.4
Maruyama, H.5
Kubo, M.6
Yamaguchi, H.7
Ryuzaki, D.8
Takeda, K.9
Hinode, K.10
-
6
-
-
0004099318
-
-
a Wiley-Interscience Publication, New York
-
S.P. Murarka, I.V. Verner, and R.J. Gutmann, "Copper-Fundamental Mechanisms for Microelectrnic Applications", a Wiley-Interscience Publication, New York, 2000, p.35.
-
(2000)
Copper-Fundamental Mechanisms for Microelectrnic Applications
, pp. 35
-
-
Murarka, S.P.1
Verner, I.V.2
Gutmann, R.J.3
-
7
-
-
0031270332
-
Dielectric barriers for Cu metallization systems
-
M. Vogt, M. Kachel, M. Plotner, and K. Drescher, "Dielectric Barriers for Cu Metallization Systems", Microelectronics Engineering, Vol, 37/38, 1997, p.181.
-
(1997)
Microelectronics Engineering
, vol.37-38
, pp. 181
-
-
Vogt, M.1
Kachel, M.2
Plotner, M.3
Drescher, K.4
-
8
-
-
0027886510
-
Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for (Si) mod Cu metallizations
-
J.S. Reid, E. Kolawa, R.P. Ruiz, and M.-A. Nicolet, "Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for (Si) mod Cu metallizations", Thin Solid Films, Vol. 236, 1993, p. 319.
-
(1993)
Thin Solid Films
, vol.236
, pp. 319
-
-
Reid, J.S.1
Kolawa, E.2
Ruiz, R.P.3
Nicolet, M.-A.4
-
9
-
-
0000507429
-
Performance of tantalum-silicon-nitride diffusion barrier between copper and silicon dioxide
-
M.S. Angyal, Y. Shacham-Diamand, J.S. Reid, and M.-A. Nicolet, "Performance of tantalum-silicon-nitride diffusion barrier between copper and silicon dioxide", Applied Physics Letters, Vol. 67, 1995, p. 2152.
-
(1995)
Applied Physics Letters
, vol.67
, pp. 2152
-
-
Angyal, M.S.1
Shacham-Diamand, Y.2
Reid, J.S.3
Nicolet, M.-A.4
-
10
-
-
0000316272
-
Sputtering of tantalum-based diffusion barriers in Si/Cu metallization: Effects of gas pressure and composition
-
M. Stavrev, C. Wenzel, A. Moller, and K. Drescher, "Sputtering of tantalum-based diffusion barriers in Si/Cu metallization: Effects of gas pressure and composition", Applied Surface Science, Vol. 91, 1995, p. 257.
-
(1995)
Applied Surface Science
, vol.91
, pp. 257
-
-
Stavrev, M.1
Wenzel, C.2
Moller, A.3
Drescher, K.4
-
11
-
-
84975340255
-
Reliability of copper metallization on silicon-dioxide
-
Y. Shacham-Diamand, A. Dedhia, D. Hofstetter, and W.G. Goldham, "Reliability of copper metallization on silicon-dioxide", Proceedings of VLSI Multilevel Interconnection Conference, 1991, p.109.
-
(1991)
Proceedings of VLSI Multilevel Interconnection Conference
, pp. 109
-
-
Shacham-Diamand, Y.1
Dedhia, A.2
Hofstetter, D.3
Goldham, W.G.4
-
12
-
-
84971922594
-
Barriers against copper diffusion into silicon and drift through silicon dioxide
-
S.-Q. Wang, "Barriers against copper diffusion into silicon and drift through silicon dioxide", MRS Bull, Vol. 8, 1994, p.30.
-
(1994)
MRS Bull
, vol.8
, pp. 30
-
-
Wang, S.-Q.1
-
13
-
-
0011076409
-
2 thin films
-
2 thin films", J. App.. Phys., Vol. 84, No. 3, 1998, p.1513.
-
(1998)
J. App.. Phys.
, vol.84
, Issue.3
, pp. 1513
-
-
McPherson, J.W.1
Mogul, H.C.2
-
14
-
-
0035395901
-
Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization
-
J. Noguchi, N. Ohashi, T. Jimbo, H. Yamaguchi, K.-I. Takeda, and K. Hinode, "Effect of NH3-Plasma Treatment and CMP Modification on TDDB Improvement in Cu Metallization", IEEE Transactions on Electron Devices, Vol. 48, No. 7, 2001, p.1340.
-
(2001)
IEEE Transactions on Electron Devices
, vol.48
, Issue.7
, pp. 1340
-
-
Noguchi, J.1
Ohashi, N.2
Jimbo, T.3
Yamaguchi, H.4
Takeda, K.-I.5
Hinode, K.6
-
15
-
-
0034428735
-
Time-dependent-dielectric breakdown used to assess copper contamination impact on inter-level dielectric reliability
-
R. Gonella, P. Motte, and J. Torres, "Time-dependent-dielectric breakdown used to assess copper contamination impact on inter-level dielectric reliability", IEEE '2000 IRW Final Report, 2000, p. 189.
-
(2000)
IEEE '2000 IRW Final Report
, pp. 189
-
-
Gonella, R.1
Motte, P.2
Torres, J.3
-
16
-
-
0000179930
-
Copper diffusion in amorphous thin films of 4% phosphorous-silicon glass and hydrogenated silicon nitride
-
D. Gupta, K. Vieregge, and K. V. Srikrishnan, "Copper diffusion in amorphous thin films of 4% phosphorous-silicon glass and hydrogenated silicon nitride", Applied Physics Letter, Vol. 61, 1992, p. 2178.
-
(1992)
Applied Physics Letter
, vol.61
, pp. 2178
-
-
Gupta, D.1
Vieregge, K.2
Srikrishnan, K.V.3
-
17
-
-
0022738306
-
Diffusion of metals in silicon dioxide
-
J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, "Diffusion of metals in silicon dioxide", Journal of Electrochemistry Society, Vol. 133, 1986, p. 1242.
-
(1986)
Journal of Electrochemistry Society
, vol.133
, pp. 1242
-
-
McBrayer, J.D.1
Swanson, R.M.2
Sigmon, T.W.3
|