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Journal of Vacuum Science and Technology B

Volumn 29, Issue 3, 2011, Pages

Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering

(7) Huh, Myung Soo a,b Won, Seok Jun a Yang, Bong Seob a Oh, Seungha a Oh, Myeong Sook a Jeong, Jae Kyeong c Kim, Hyeong Joon a

a Seoul National University (South Korea)

b Biotechnology Research Institute of CHROMACH Co (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; OXIDE MINERALS; SPUTTERING; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CONVENTIONAL SPUTTERING; DEPOSITION PRESSURES; FIELD-EFFECT MOBILITIES; SUBTHRESHOLD; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE (ZNO); ZNO SEMICONDUCTORS; ZNO THIN FILM;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 79958158137 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3571760 Document Type: Article

Times cited : (1)

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