SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 17, 2008, Pages

Dependency of threshold switching on density of localized states of Ge 2Sb2Te5 thin films for phase change random access memory

(7) Ryu, Seung Wook a Lee, Jong Ho a Ahn, Yong Bae a Kim, Choon Hwan b Choi, Byung Joon a Hwang, Cheol Seong a Kim, Hyeong Joon a

a Seoul National University (South Korea)

b Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; RANDOM ACCESS STORAGE; SYSTEM THEORY; TELLURIUM COMPOUNDS; THICK FILMS;

CRYSTALLINITY; DENSITY OF LOCALIZED STATES; ELECTRICAL RESISTANCES; OPTICAL BANDS; PHASE CHANGES; RANDOM ACCESS MEMORY APPLICATIONS; RANDOM ACCESSES; THRESHOLD SWITCHING; URBACH EDGES;

PHASE CHANGE MEMORY;

EID: 55149123583 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3012366 Document Type: Article

Times cited : (15)

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