Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow- k interconnects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1866-1872

  Chen, Zhe ^a   Prasad, K ^a   Jiang, N ^b   Tang, L J ^b   Lu, P W ^b   Li, C Y ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION;

DIELECTRIC COMPOSITES; THERMALELECTRICAL STRESS;

SILICON CARBIDE;

EID: 31144433279     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2006129     Document Type: Article

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