Effects of surface cleaning on stressvoiding and electromigration of Cu-damascene interconnection

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 1, 2008, Pages 210-215

  Wang, Jen Pan ^b   Su, Yan Kuin ^a,b   Chen, Jone F ^a,b  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Dual damascene; Electromigration (EM); Stress induced voiding (SIV); Stressmigration (SM); Stressvoiding (SV); Ultralarge scale integrated circuit (ULSI)

Indexed keywords

COPPER; ELECTROMIGRATION; METALLIZING; SURFACE CLEANING; ULSI CIRCUITS;

DUAL DAMASCENE; STRESS-INDUCED VOIDING (SIV); STRESSMIGRATION (SM); STRESSVOIDING (SV);

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 40549139161     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.912263     Document Type: Article

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