Effects of ammonia plasma treatment on the electrical properties of plasma-enhanced chemical vapor deposition amorphous hydrogenated silicon carbide films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5734-5738

  Li, Yan Way ^a   Chen, Chia Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A SiC:H; Ammonia plasma; Dielectric constant; Leakage current; PECVD

Indexed keywords

AMMONIA; CHEMICAL BONDS; ENERGY GAP; HYDROGENATION; IONIZATION; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA TREATMENT;

AMORPHOUS FILMS;

EID: 0036757851     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5734     Document Type: Article

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