Physical and barrier properties of plasma enhanced chemical vapor deposition α-SiC:N:H films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4489-4494

  Chiang, Chiu Chih ^a   Wu, Zhen Cheng ^a   Wu, Wei Hao ^a   Chen, Mao Chieh ^a   Ko, Chung Chi ^b   Chen, Hsi Ping ^b   Jang, Syun Ming ^b   Yu, Chen Hua ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Carbon; Crosslinked; Dielectric barrier; Porosity; SiC:N:H

Indexed keywords

CARBON; FILMS; HYDROGEN; MOISTURE; MOLECULAR STRUCTURE; NITROGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; THERMODYNAMIC STABILITY;

BARRIER PROPERTIES; MOISTURE RESISTANCE;

SILICON CARBIDE;

EID: 0141494576     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4489     Document Type: Article

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