Comparison of characteristics and integration of copper diffusion-barrier dielectrics

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 36-42

  Wang, T C ^a   Cheng, Y L ^b   Wang, Y L ^b   Hsieh, T E ^a   Hwang, G J ^a   Chen, C F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Adhesion strength; Barrier layer; Capacitance; Low dielectric constant

Indexed keywords

ADHESION; CAPACITANCE; COPPER; DEPOSITION; ELECTROMIGRATION; OPTIMIZATION; SILICON COMPOUNDS;

ADHESION STRENGTH; BARRIER LAYER; LOW DIELECTRIC CONSTANT; STRESS-INDUCED VOID MIGRATION (SM);

DIELECTRIC MATERIALS;

EID: 30944460713     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.059     Document Type: Conference Paper

References (18)

1. S.G. Lee, Y.J. Kim, S.P. Lee, H.Y. Oh, and S.J. Lee Jpn. J. Appl. Phys. 40 2001 2663
2. L. Peters Semicond. Int. 23 2000 108
3. A.S. Lee, N. Rajagopalan, M. Le, B.H. Kim, and H. M'Saad J. Electrochem. Soc. 151 2004 F7
4. M. Tanaka, S. Saida, T. Iijima, and Y. Tsunashima Proceedings of 1999 IEEE VLSI Technology, June 14-16 1999 47
5. X. Peng, L. Song, J. Le, and X. Hu J. Vac. Sci. Technol., B 20 2002 159
6. T. Ishimara, Y. Shioya, H. Ikakura, M. Nozawa, Y. Nishimoto, S. Ohgawara, and K. Maeda Proceedings of 2001 Interconnect Technology Conference, June 4-6 2001 36
7. J. Martin, S. Filipiak, T. Stephens, F. Huang, M. Aminpur, J. Mueller, E. Demircan, L. Zhao, J. Werking, C. Goldberg, S. Park, T. Sparks, and C. Esber Proceedings of 2002 Interconnect Technology Conference, June 3-5 2002 42
8. Y.W. Li, and C.F. Chen Jpn. J. Appl. Phys. 41 2002 5734
9. C.C. Chiang, Z.C. Wu, W.H. Wu, M.C. Chen, C.C. Ko, H.P. Chen, S.M. Jang, C.H. Yu, and M.S. Liang Jpn. J. Appl. Phys. 42 2003 4489
10. Y.W. Koh, K.P. Loh, L. Rong, A.T.S. Wee, L. Huang, and J. Sudijono Jpn. J. Appl. Phys. 93 2003 1241
11. K. Goto, H. Yuasa, A. Andatsu, and M. Matsuura Proceedings of 2003 Interconnect Technology Conference, June 2-4 2003 6
12. S.J. Gregg, and K.S.W. Sing Adsortion, Surface Area and Porosity 1982 Academic Press London
13. K.-W. Lee, S.G. Lee, W.J. Park, B.J. Oh, J.H. Kim, S.J. Lee, K.K. Park, L.G. Kim, J.H. Chung, K.T. Lee, W.J. We, W.S. Song, S.R. Hah, H.K. Kang, and K.-P. Suh Proceedings of 2003 IEEE VLSI Technology, June 2003 129
14. C.C. Chiang, M.C. Chen, Z.C. Wu, L.J. Li, S.M. Jang, C.H. Yu, and M.S. Liang J. Electrochem. Soc. 151 2004 G89
15. Z.C. Wu, Z.W. Shiung, C.C. Wang, K.L. Fang, R.G. Wu, Y.L. Liu, B.Y. Tsui, M.C. Chen, W. Chang, P.F. Chou, S.M. Jang, C.H. Yu, and M.S. Liang Proceedings of 2002 Interconnect Technology Conference, June 5-7 2000 82
16. C.-K. Hu, L. Gignac, E.L. Liniger, B. Herbst, D.L Rath, S.T. Chen, S. Kaldor, A. Simon, and W.-T. Tseng Appl. Phys. Lett. 83 2003 869
17. C.L. Gan, C.V. Thompson, K.L. Pey, W.K. Choi, H.L. Tay, B. Yu, and M.K. Radhakrishnan Appl. Phys. Lett. 79 2001 4592
18. K.N. Tu Jpn. J. Appl. Phys. 94 2003 5451