Low-k SiN film for Cu interconnects integration fabricated by ultra low temperature thermal CVD

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 47-48

  Tanaka, Masayuki ^a   Saida, Shigehiko ^a   Iijima, Tadashi ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION IN SOLIDS; LOW TEMPERATURE OPERATIONS; OXIDATION; PERMITTIVITY; PRESSURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SILICON NITRIDE;

BIAS TEMPERATURE STRESS TEST; COPPER INTERCONNECTS; DAMASCENE INTERCONNECTS; ETCH STOP; HEXACHLORODISILANE; THERMAL CHEMICAL VAPOR DEPOSITION; THERMAL DESORPTION SPECTROSCOPY;

DIELECTRIC FILMS;

EID: 0033280897     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)