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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages 573-576

Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition

(6) Cheng, Yi Lung a Chen, Shiuan An a Chiu, Tai Jung a Wu, Jiung b Wei, Bor Jou b Chang, Hung Jui c

a NATIONAL CHI NAN UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COPPER COMPOUNDS; DIELECTRIC MATERIALS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

BARRIER DIELECTRICS; CHEMICAL VAPOUR DEPOSITION; COPPER CU; DIELECTRICS BREAKDOWN; ELECTRICAL PERFORMANCE; NITROGEN FLOW; NITROGEN FLOW RATES; PERFORMANCE; RELIABILITY PERFORMANCE; SILICON CARBIDE FILMS;

SILICON CARBIDE;

EID: 77953006375 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3425633 Document Type: Conference Paper

Times cited : (11)

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