Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 750-756

  Shioya, Yoshimi ^a   Maeda, Kazuo ^a   Ishimaru, Tomomi ^b   Ikakura, Hiroshi ^b   Masubuchi, Tomoaki ^b   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c  

^a Semiconductor Process Lab Co Ltd   (Japan)

^b CANON INC   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cu barrier dielectric film; Cu thermal diffusion; PALS; PE CVD; SiOCNH

Indexed keywords

AMMONIA; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DESORPTION; ELECTRIC BREAKDOWN; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASS SPECTROMETRY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; SILANES; THERMAL DIFFUSION;

CU BARRIER DIELECTRIC FILMS; CU THERMAL DIFFUSION; PALS; SIOCNH; THERMAL DESORPTION SPECTROSCOPY (TDS);

DIELECTRIC FILMS;

EID: 2142657945     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.750     Document Type: Article

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