The effect of line width on stress-induced voiding in Cu dual damascene interconnects

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 298-301

  Shao, W ^a   Gan, Z H ^a   Mhaisalkar, S G ^a   Chen, Zhong ^a   Li, Hongyu ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Finite element analysis; Line width; Stress gradient; Stress induced voiding

Indexed keywords

DIFFUSION; ELECTRIC RESISTANCE; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); ION BEAMS; STRESSES;

LINE WIDTH; MIGRATION; STRESS GRADIENTS; STRESS INDUCED VOIDING (SIV);

INTERCONNECTION NETWORKS;

EID: 33644921204     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.064     Document Type: Conference Paper

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