Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors

Thin Solid Films

Volumn 519, Issue 16, 2011, Pages 5638-5644

  Brunet, M ^a   Kotb, H Mafhoz ^b   Bouscayrol, L ^a   Scheid, E ^a   Andrieux, M ^c   Legros, C ^c   Schamm Chardon, S ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b Assiut University   (Egypt)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

3D capacitors; Electrical properties and measurements; High dielectric constant; Metal organic chemical vapor deposition; Tetragonal; Transmission electron microscopy; Zirconium oxide

Indexed keywords

3D CAPACITORS; ELECTRICAL PROPERTIES AND MEASUREMENTS; HIGH DIELECTRIC CONSTANTS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; TETRAGONAL; ZIRCONIUM OXIDE;

ASPECT RATIO; CAPACITORS; DEPOSITION; ELECTRIC PROPERTIES; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; THIN FILMS; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

VAPOR DEPOSITION;

EID: 79957987899     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.006     Document Type: Article

References (38)

1. R.K. Ulrich, and L.W. Shaper Integrated Passive Component Technology 2003 IEEE Press, Wiley & sons, Inc.
2. F. Roozeboom, R.J.G. Elfrink, Th.G.S.M. Rijks, J.F.C.M. Verhoeven, A. Kemmeren, and J.E.A.M. van den Meerakker International Symposium on Microelectronics, Baltimore, U.S.A., October 9 11 2001 Proceedings of Society of Photo-Optical Instrumentation Engineers (SPIE) 4587 2001 477
3. V. Lehmann, W. Hönlein, H. Reisinger, A. Spitzer, H. Wendt, and J. Willer Thin Solid Films 276 1996 138
4. M. Brunet, P. Kleimann, E. Daran, F. Carcenac, L. Jalabert, and P. Dubreuil MicroMech. Eur. Workshop 22 2009 B17
5. J.H. Klootwijk, K.B. Jinesh, W. Dekkers, J.F. Verhoeven, F.C. van den Heuvel, H.D. Kim, D. Blin, M.A. Verheijen, R.G.R. Weemaes, M. Kaiser, J.J.M. Ruigrok, and F. Roozeboom IEEE Electron Device Lett. 29 2008 740
6. P. Banerjee, I. Perez, L. Henn-Lecordier, S.B. Lee, and G.W. Rubloff Nat. Nanotechnol. 4 2009 292
7. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
8. J. McPherson, J.-Y. Kim, A. Shanware, and H. Mogul Appl. Phys. Lett. 82 2003 2121
9. H. Kim, and P.C. McIntyre J. Korean Phys. Soc. 48 2006 5
10. X. Zhao, and D. Vanderbilt Phys. Rev. B 65 2002 075105
11. X. Zhao, and D. Vanderbilt M.I. Gardner, J.-P. Maria, S. Stemmer, S. De Gendt, Novel Materials and Processes for Advanced CMOS Proceedings of the 2002 MRS Fall Meeting 745 2003 N7.2.1
12. K. Galicka-Fau, C. Legros, M. Andrieux, M. Brunet, J. Szade, and G. Garry Appl. Surf. Sci. 255 2009 8986
13. K. Galicka-Fau, C. Legros, M. Andrieux, M. Brunet, G. Leclerc, E. Scheid, and S. Schamm Proceedings of the International Symposium CVD XVII and EUROCVD 17, Vienna, Austria, October 4-9, 2009 ECS Transactions 25 2009 1121
14. M. Brunet, P. Dubreuil, H. Mahfoz-Kotb, A. Gouantes, and A.-M. Dorthe Microsyst. Technol. 15 2009 1449
15. Y.-Z. Hu, and S.-P. Tay J. Vac. Sci. Technol. B 19 2001 1706
16. Y.S. Lin, R. Puthenkovilakam, J.P. Chang, C. Bouldin, I. Levin, N.V. Nguyen, J. Ehrstein, Y. Sun, P. Pianetta, T. Conard, W. Vandervorst, V. Venturo, and S. Selbrede J. Appl. Phys. 93 2003 5945
17. M.K. Bera, and C.K. Maiti Mat. Sci. Semicon. Process. 9 2006 909
18. D. Tsoutsou, G. Apostolopoulos, S.F. Galata, P. Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, A. Dimoulas, A. Lagoyannis, A.G. Karydas, V. Kantarelou, and S. Harissopoulos J. Appl. Phys. 106 2009 024107
19. C.M. Phillippi, and K.S. Mazdiyasni J. Amer. Ceram. Soc. 54 1971 254
20. E. Anastassakis, B. Papanicloaou, and I.M. Asher J. Phys. Chem. Solids 36 1975 667
21. Z. Qian, and J.L. Shi Nano structured Mater. 10 1998 235
22. C. Pecharroman, M. Ocana, P. Tartaj, and C.J. Serna Mater. Res. Bull. 29 1994 417
23. D.W. Liu, C.H. Perry, and R.P. Ingel J. Appl. Phys. 64 1988 1413
24. Y.C. Sun, and C.T. Sah Solid State Electron. 24 1981 569
25. C. Channelière, and J.-L. Autran Mater. Sci. Eng. R 22 1998 269
26. C.Y. Ma, F. Lapostolle, P. Briois, and Q.Y. Zhang Appl. Surf. Sci. 253 2007 8718
27. O. Bernard, A.M. Huntz, M. Andrieux, W. Seiler, V. Ji, and S. Poissonnet Appl. Surf. Sci. 253 2007 4626
28. J. Aarik, A. Aidla, H. Mandar, T. Uustare, and V. Sammelselg Thin Solid Films 408 2002 97
29. S.-S. Huang, and T.B. Wu J. Vac. Sci. Technol. B 22 2004 1940
30. C.R. Aita, M.D. Wiggins, R. Whig, C.M. Scanlan, and M.G. Josifovska J. Appl. Phys. 79 1996 1176
31. S. Tsunekawa, S. Ito, Y. Kawazoe, and J.T. Wang Nano Lett. 3 2003 871
32. V. Filipovich, and A. Kalinina Struct. Glass 5 1965 34
33. R.C. Garvie J. Phys. Chem. 82 1978 218
34. M. Lisker, M. Silinskas, S. Matichyn, and E.P. Burte Integr. Ferroelect. 74 2005 113
35. S. Ramanathan, C.-M. Park, and P. McIntyre J. Appl. Phys. 91 2002 4521
36. M. Brunet, E. Scheid, K. Galicka-Fau, M. Andrieux, C. Legros, I. Gallet, M. Herbst, and S. Schamm Microelectron. Eng. 86 2009 2034
37. P.V. Aleskandrova, V.K. Gueorguiev, Tz.E Ivanov, and J.B. Koprinarova Eur. Phys. J. B 52 2006 453
38. J.-L. Autran, D. Munteanu, and M. Houssa M. Houssa, Fundamental and Technological Aspects of High-k Gate Dielectrics 2004 Institute of Physics Publishing London 251