Role of the MOCVD deposition conditions on physico-chemical properties of tetragonal ZrO 2 thin films

Applied Surface Science

Volumn 255, Issue 22, 2009, Pages 8986-8994

  Galicka Fau, K ^a   Legros, C ^a   Andrieux, M ^a   Brunet, M ^b   Szade, J ^c   Garry, G ^d  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c UNIVERSITY OF SILESIA   (Poland)

^d THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

3D; DLI MOCVD; High aspect ratio pores; Tetragonal and monoclinic phases; ZrO 2

Indexed keywords

ASPECT RATIO; CRYSTAL MICROSTRUCTURE; DEPOSITION; MICROELECTRONICS; OXYGEN; PARTIAL PRESSURE; PERMITTIVITY; SILICON; ZIRCONIA;

EXPERIMENTAL PARAMETERS; HIGH ASPECT RATIO; INJECTION FREQUENCIES; LOW OXYGEN PARTIAL PRESSURE; MONOCLINIC PHASIS; OXYGEN PARTIAL PRESSURE; PHYSICOCHEMICAL PROPERTY; ZRO2;

THIN FILMS;

EID: 68649126813     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.067     Document Type: Article

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