Effect of O 2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO 2 thin films

Applied Surface Science

Volumn 253, Issue 21, 2007, Pages 8718-8724

  Ma, C Y ^a,b   Lapostolle, F ^b   Briois, P ^b   Zhang, Q Y ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITÉ DE TECHNOLOGIE DE BELFORT MONTBÉLIARD   (France)

Author keywords

Dielectric constant; Interfacial layer; Rf magnetron sputtering; Structure; ZrO 2 films

Indexed keywords

ATOMIC FORCE MICROSCOPY; HEATING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; ZIRCONIUM COMPOUNDS;

INTERFACIAL LAYER; RF MAGNETRON SPUTTERING; VARIATION OF STRUCTURE;

THIN FILMS;

EID: 34547400989     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.04.054     Document Type: Article

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