Factorial experimental design applied to DRIE for optimised process in power electronics applications requiring high-aspect ratio trenches

Microsystem Technologies

Volumn 15, Issue 9, 2009, Pages 1449-1457

  Brunet, Magali ^a   Dubreuil, Pascal ^a   Mahfoz Kotb, Hicham ^b   Gouantes, Aline ^a   Dorthe, Anne Marie ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b Assiut University   (Egypt)

^c UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

DoE; DRIE; High aspect ratio; Power electronics

Indexed keywords

ACTIVE DEVICES; ANALYTICAL EXPRESSIONS; DEEP TRENCH; DOE; DRIE; ETCH RATES; FACTORIAL EXPERIMENTAL DESIGN; HIGH ASPECT RATIO STRUCTURES; HIGH-ASPECT RATIO; HIGH-DENSITY; INFLUENCE OF OXYGEN; INTEGRATED CAPACITORS; MOS-FET; OPTIMUM CONDITIONS; PASSIVE DEVICES; PROCESS PARAMETERS; SUPERJUNCTIONS;

CAPACITANCE; CAPACITORS; MOSFET DEVICES; OXYGEN; PASSIVATION; POWER ELECTRONICS; PRESSURE DROP; STATISTICS; THREE DIMENSIONAL;

ASPECT RATIO;

EID: 68949151811     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-009-0893-3     Document Type: Article

References (19)

1. AA Ayón R Braff CC Lin HH Sawin MA Schmidt 1999 Characterization of a time multiplexed inductively coupled plasma etcher J Electrochem Soc 146 1 339 349
2. Benazzi A, Brunet M, Dubreuil P, Mauran N, Bary L, Laur J-P, Sanchez J-L, Isoird K (2007) Performance of 3D capacitors integrated on silicon for DC-DC converter applications. European Conference on Power Electronics and Applications
3. Blauw MA (2004) Deep anisotropic dry etching of silicon microstructures by high-density plasmas, PhD Thesis, Delft University of Technology
4. CM Borror DC Montgomery 2000 Mixed resolution designs as alternatives to Taguchi inner/outer array designs for robust design problems Qual Reliab Eng Int 16 117 127
5. Box GEP, Hunter JS, Hunter WG (2005) Statistics for experimenters. Wileys Series in Probability and Statistics, Second edition
6. Brunet M, Dubreuil P, Scheid E, Sanchez J-L (2006) Development of fabrication techniques for high-density integrated MIM capacitors in power conversion equipment. Micromachining and microfabrication process technology XI, part of the SPIE MOEMS-MEMS Symposium, Photonics West
7. SC Chen YC Lin JC Wu L Horng CH Cheng 2007 Parameter optimization for an ICP deep silicon etching system Microsyst Technol 13 465 474 10.1007/s00542-006-0211-2 (Pubitemid 46324421)
8. C-K Chung 2004 Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system J Micromech Microeng 14 656 662 10.1088/0960-1317/14/4/029
9. JW Coburn HF Winters 1989 Conductance considerations in the reactive ion etching of high aspect ratio features Appl Phys Lett 55 26 2730 2732 10.1063/1.101937
10. RA Gottscho CW Jurgensen 1992 Microscopic uniformity in plasma etching J Vac Sci Technol B 10 5 2133 2147 10.1116/1.586180
11. Goupy J (2001) Introduction aux plans d'expériences: optimisation du choix des essais et de l'interprétation, Duno
12. S Jensen O Hansen 2004 Characterization of the microloading effect in deep reactive ion etching of silicon Proc SPIE-Int Soc Opt Eng 5342 111 118
13. J Kiihamäki S Franssila 1999 Pattern shape effects and artefacts in deep silicon etching J Vac Sci Technol A 17 4 2280 2285 10.1116/1.581761
14. Laermer F, Schilp A (1994) Method of anisotropically etching silicon. US Patent 5,501,893
15. Montgomery DC (1995) Design and analysis of experiments, 3rd edn. Wiley, New York
16. 2 mask etching selectivity in the new D-RIE process. In: Proceedings of the 14th IEEE Annual International Conference on Microelectromechanical Systems, New York, USA, pp 76-79
17. Taguchi G (1988), Introduction to quality engineering: designing quality into products and processes, Asian Productivity Organisation, Japan
18. Théolier L, Isoird K, Morancho F, Roig J, Mahfoz Kotb H, Brunet M, Dubreuil P (2007) Deep trench MOSFET structures study for 1200 volts applications. In: Proceedings of the European Conference on Power Electronics, Denmark
19. Yeom J, Wu Y, Shannon MA (2003) Critical aspect ratio dependence in deep reactive ion etching of silicon. In: Transducers, 12th International conference on solid-state sensors, actuators and microsystems, vol 2, pp 1631-1634