Zr02 thin films grown on 2D and 3D silicon surfaces by DLI-MOCVD for electronic devices

ECS Transactions

Volumn 25, Issue 8 PART 2, 2009, Pages 1121-1128

  Galicka Fau, K ^a   Andrieux, M ^a   Legros, C ^a   Herbst Ghysel, M ^a   Gallet, I ^a   Brunet, M ^b   Scheid, E ^b   Schamm, S ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; DEPOSITION PARAMETERS; ELECTRONIC APPLICATION; ELECTRONIC DEVICE; HIGH DENSITY; LIQUID-INJECTION MOCVD; MOCVD; PHASE TRANSFORMATION; PLANAR SUBSTRATE; SI(1 0 0); SILICON SURFACES; THERMAL BARRIER; THIN LAYERS; XRD; ZIRCONIA FILM;

ELECTRIC PROPERTIES; ELECTROPHYSIOLOGY; FUEL CELLS; PHASE STABILITY; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING CIRCUITS; THIN FILMS; THREE DIMENSIONAL; TWO DIMENSIONAL; ZIRCONIA; ZIRCONIUM;

CHEMICAL VAPOR DEPOSITION;

EID: 76649130662     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207715     Document Type: Conference Paper

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