Digital signal propagation delay in a nano-circuit containing reactive and resistive elements

Solid-State Electronics

Volumn 61, Issue 1, 2011, Pages 87-92

  Arora, Vijay K ^a,b   Chek, Desmond C Y ^a   Hashim, Abdul Manaf ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b WILKES UNIVERSITY   (United States)

Author keywords

L R time constant; Propagation delay; RC time constant; Resistance surge; Transconductance; Transistor frequency; Transit time delay

Indexed keywords

PROPAGATION DELAYS; RC TIME CONSTANT; RESISTANCE SURGE; TIME CONSTANTS; TRANSIT-TIME DELAY;

DELAY CIRCUITS; ELECTRIC FIELDS; FREQUENCY RESPONSE; MEMS; POWER QUALITY; TIME DELAY; TRANSCONDUCTANCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955639900     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.004     Document Type: Article

References (34)

1. M.L.P. Tan Resistance blow-up effect in micro-circuit engineering Solid State Electron 54 December 2010 1617 1624
2. D.R. Greenberg, and J.A. del Alamo Velocity saturation in the extrinsic device: a fundamental limit in HFET's IEEE Trans Electron Dev 41 1994 1334 1339
3. M.J. Deen, and Z.X. Yan A simple propagation delay model for BiCMOS drive circuits Solid State Electron 35 January 1992 9 13
4. Z.X. Yan, and M.J. Deen New BiCMOS delay model to include RC-limited BJT saturation effect Solid State Electron 36 1993 1523 1528 (Pubitemid 23706930)
5. R.I. Bahar Architectures for silicon nanoelectronics and beyond Computer 40 2007 25 33
6. Sabatini G, et al. Monte Carlo simulation of ballistic transport in high-mobility channels. In: 16th International conference on electron dynamics in semiconductors, optoelectronics and nanostructures 16th ed., vol. 193; 2009.
7. M.A. Riyadi, and V.K. Arora The channel mobility degradation in a nanoscale MOSFET due to injection from the ballistic contacts J.Appl Phys 109 2011 056103
8. H. Tsuchiya Role of carrier transport in source and drain electrodes of high-mobility MOSFETs IEEE Electron Dev Lett 31 April 2010 365 367
9. E. Gnani Effective mobility in nanowire FETS under quasi-ballistic conditions IEEE Trans Electron Dev 57 2010 336 344
10. M. Margala Ballistic electronics: breaking the barrier in terahertz speed processing Terahertz Phys, Dev, Syst Iv: Adv Appl Ind Defense 7671 2010 280
11. Y. Awano Carbon nanotubes for VLSI: interconnect and transistor applications Proc IEEE 98 June 2010 2015 2031
12. A. Benfdila On the drain current saturation in carbon nanotube field effect transistors NANO 5 June 2010 161 165
13. Sano N. Quasi-ballistic transport in nano-scale devices: boundary layer, potential fluctuation, and coulomb interaction. In: Sispad 2010 - 15th international conference on simulation of semiconductor processes and devices; 2010. p. 177-80.
14. de Rivaz S, et al. Rise time reduction of high speed digital signals on interconnects of the CMOS 45 nm node by optimizing interconnect inductance. In: Microwave and optoelectronics conference (IMOC), 2009 SBMO/IEEE MTT-S international, 2009; 2009. p. 407-11.
15. G. Palumbo, and M. Poli Propagation delay model of a current driven RC chain for an optimized design IEEE Trans Circuits Syst I: Fund Theory Appl 50 2003 572 575
16. J.W. Lee Comparison of hole mobility in LOGOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates IEEE Electron Dev Lett 20 April 1999 176 178
17. T. Saxena Microcircuit modeling and simulation beyond Ohm's Law IEEE Trans Educ 54 2011 34 40
18. Arora VK. Scattering-limited and ballistic transport in nanoelectronic devices. In: 2009 2nd International workshop on electron devices and semiconductor technology; 2009. p. 219-24.
19. Saad I, et al. Physics-based modelling of ballistic transport in nanoscale transistor. In: Third Asia international conference on modelling & simulation, vols. 1 and 2; 2009. p. 729-34.
20. Arora VK. Invited paper: modeling of nanoscale MOSFET using MATLAB. In: 2009 Third asia international conference on modelling & simulation, vols. 1 and 2. ; 2009. p. 739-44.
21. I. Saad Ballistic saturation velocity of quasi-2D low-dimensional nanoscale field effect transistor (FET) Nanosci Nanotechnol 1136 2009 302 306
22. T. Takegishi Theoretical study on performance limit of cutoff frequency in nano-scale InAs HEMTs based on quantum-corrected Monte Carlo method IEICE Trans Electron E93c August 2010 1258 1265
23. G. Samudra High-field electron transport for ellipsoidal multivalley band structure of silicon J Appl Phys 72 1992 4700 4704
24. G. Samudra The role of velocity saturation on switching delay of RC-loaded inverter Semicond Sci Technol 9 1994 1108 1116
25. I. Saad Ballistic mobility and saturation velocity in low-dimensional nanostructures Microelectron J 40 2009 540 542
26. I. Saad The dependence of saturation velocity on temperature, inversion charge, and electric field in a nanoscale MOSFET Int J Nanoelectron Mater 3 2010 17 34
27. M.T. Ahmadi The high-field drift velocity in degenerately-doped silicon nanowires Int J Nanotechnol 6 2009 601 617
28. V.K. Arora Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures Curr Nanosci 5 May 2009 227 231
29. V.K. Arora High-electric-field initiated information processing in nanoelectronic devices S. Anwar, Nanotechnology for telecommunications handbook 2010 CRC/Taylor and Francis Group Oxford (UK) 309 334
30. M.L.P. Tan Enhancement of nano-RC switching delay due to the resistance blow-up in InGaAs NANO 2 2007 233
31. H. Sakaki Roles of low field mobility and its carrier-concentration dependences in high electron mobility transistors and other field effect transistors Electron Dev Lett IEEE 9 1988 133 135 (Pubitemid 18611970)
32. B.L. Anderson, and R.L. Anderson Fundamentals of semiconductor devices 2005 McGraw-Hill New York (NY)
33. F. Mustafa Fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection Superlatt Microstruct 47 2010 274 287
34. C.C. Hu Modern semiconductor devices for integrated circuits 2010 Pearson/Prentice-Hall Upper Saddle River (NJ)