Quasi-ballistic transport in nano-scale devices: Boundary layer, potential fluctuation, and Coulomb interaction

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 177-180

  Sano, Nobuyuki ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3D MONTE CARLO; BOLTZMANN TRANSPORT EQUATION; DEVICE PROPERTIES; DEVICE SIMULATORS; ELECTRON DISTRIBUTION FUNCTION; NANOSCALE DEVICE; PHYSICAL MECHANISM; POTENTIAL FLUCTUATIONS; QUASI-BALLISTIC TRANSPORT; TRANSPORT CHARACTERISTICS; VIRTUAL SOURCES;

ATMOSPHERIC BOUNDARY LAYER; BALLISTICS; BOLTZMANN EQUATION; COULOMB INTERACTIONS; DISTRIBUTION FUNCTIONS; NANOSTRUCTURED MATERIALS; TRANSPORT PROPERTIES;

SEMICONDUCTOR DEVICES;

EID: 78649568216     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604535     Document Type: Conference Paper

References (6)

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