Physics-based modelling of ballistic transport in nanoscale transistor

Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009

Volumn , Issue , 2009, Pages 729-734

  Saad, Ismail ^a,b   Lee, Razak M A ^a   Ismail, Razali ^b   Arora, Vijay K ^b,c  

^a UNIVERSITI MALAYSIA SABAH   (Malaysia)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; BALLISTIC TRANSPORTS; CARRIER VELOCITY; CHANNEL LENGTH; FERMI VELOCITIES; INTRINSIC VELOCITY; MEAN-FREE PATH; MOS-FET; NANOSCALE TRANSISTORS; PHYSICS-BASED MODELLING; SATURATION VELOCITY; THERMAL VELOCITY;

BALLISTICS; CARRIER CONCENTRATION; ELECTRIC FIELDS; TRANSPORT PROPERTIES;

VELOCITY;

EID: 70349751418     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AMS.2009.46     Document Type: Conference Paper

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