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Volumn 47, Issue 2, 2010, Pages 274-287
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Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
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Author keywords
AlGaAs GaAs; Dipole antenna; HEMT; RF power detector; Schottky diode
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Indexed keywords
ALGAAS/GAAS;
BARRIER HEIGHTS;
COPLANAR WAVEGUIDE TRANSMISSION LINE;
CURRENT-VOLTAGE MEASUREMENTS;
DIRECT INJECTION;
DIRECT INTEGRATION;
GAAS;
MATCHING CIRCUIT;
ON CHIPS;
ON-CHIP INTEGRATION;
PROCESSING STEPS;
RECTIFYING PROPERTIES;
RF POWER DETECTION;
RF POWER DETECTOR;
RF SIGNAL;
SCHOTTKY CONTACTS;
SCHOTTKY DIODES;
UBIQUITOUS NETWORK SOCIETIES;
COPLANAR WAVEGUIDES;
DETECTOR CIRCUITS;
DETECTORS;
DIODES;
DIPOLE ANTENNAS;
DISTILLATION;
ELECTRIC LINES;
ELECTRIC POWER MEASUREMENT;
ELECTRON MOBILITY;
FABRICATION;
HIGH ELECTRON MOBILITY TRANSISTORS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SPURIOUS SIGNAL NOISE;
TRANSMISSION LINE THEORY;
SCHOTTKY BARRIER DIODES;
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EID: 73549098661
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2009.10.011 Document Type: Article |
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Times cited : (13)
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References (18)
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