Invited paper: Modeling of nanoscale MOSFET using MATLAB

Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009

Volumn , Issue , 2009, Pages 739-744

  Arora, Vijay K ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER VELOCITY; DRIFT RESPONSE; EXPERIMENTAL DATA; HIGH ELECTRIC FIELDS; HIGH-FIELD; INTRINSIC VELOCITY; MOS-FET; MOSFET CHANNELS; NANOSCALE MOSFETS; SATURATION VELOCITY; VELOCITY VECTORS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; MATLAB; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

VELOCITY;

EID: 70349742236     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AMS.2009.21     Document Type: Conference Paper

References (22)

1. Vijay K. Arora, Michael L. P. Tan, Ismail Saad, and Razali Ismail, "Ballistic quantum transport in a nanoscale metal-oxidesemiconductor field effect transistor," Applied Physics Letters, vol. 91, pp.103510-103513 (September 2007).
2. V. K. Arora, "High-Field Distribution and Mobility in Semiconductors," Japanese Journal of Applied Physics vol. 24, pp 537-545, 1985.
3. A. Rothwarf, "A New Quantum Mechanical Channel Mobility Model for Si MOSFET's," IEEE Electron Device Letters, vol. EDL-8, no. 10, pp. 499-502, 1987.
4. V. K. Arora, "Quantum enginering of nanoelectronic devices: the role of quantum emission in limiting drift velocity and diffusion coefficient," Elsevier, Microelectronics Journal, vol. 31, no.11-12, pp 853-859. 2000; A. M. T. Fairus and V. K. Arora, "Quantum engineering of nanoelectronic devices: the role of quantum confinement on mobility degradation," Elsevier, Microelectronics Journal, vol. 32, pp. 679-686, 2000.
5. Frank Stern, "Self-Consistent Results for n-Type Si Inversion Layers," Physical Review B, vol. 5, pp. 4891-4899, 1972.
6. Michael L. P. Tan and Razali Ismail, "Modeling of Nanoscale MOSFET Performance in the Velocity Saturation Region," Jurnal Elektrika, vol. 9, no. 1, pp. 37-41, 2007.
7. Michael Tan Loong Peng, Razali Ismail, Ravisangar Muniandy and Wong Vee Kin, "Velocity Saturation Dependence on Temperature, Substrate Doping Concentration and Longitudinal Electric Field in Nanoscale MOSFET," Proceedings of the IEEE National Symposium on Microelectronics, Kuching, Sarawak, Malaysia, pp. 210-214, December 2005.
8. J. F. Cooper and D. F. Nelson, "High-field drift velocity of electrons at the Si-SiO2 interface as determined by a time-offlight technique," Journal of Applied Physics, vol. 54, no. 3, pp. 1445-1456, 1983.
9. Johnson Lee, Harold N. Spector, and Vijay K. Arora, "Impurity- Limited Mobility in a Quantum-Well Heterojunction," vol. 54, no. 12, pp. 6995-7004 (1983); "Quantum Transport in a Single Layered Structure for Impurity Scattering," vol. 42, no. 4, pp. 363-365, 1983.
10. Vijay K. Arora, "Failure of Ohm's Law: Its Implications on the Design of Nanoelectronic Devices and Circuits," Proceedings of the IEEE International Conference on Microelectronics, May 14-17, 2006, Belgrade, Serbia and Montenegro, pp. 17-24.
11. Mark Lundstrom and Jing Guo, Nanoscale Transistor, Springer, New York, 2006.
12. David R. Greenberg and Jesus A. del Alamo, "Velocity Saturation in the Extrinsic Device: A Fundamental Limit in HFET's," IEEE Transactions on Electron Devices, vol. 41, no . 8, pp. 1334-1339, 1994.
13. V. K. Arora and M. B. Das, "Effect of electric-field-induced mobility degradation on the velocity distribution in a sub- mu m length channel of InGaAs/AlGaAs heterojunction MODFET," Semiconductor Science and Technology, vol. 5, no. 9, pp. 967-973, 1990.
14. Jau-Wen Chen, Mohan Thurairaj and Mukunda B. Das, "Optimization of Gate-to-Drain Separation in Submicron Gate-Length Modulation Doped FETs for Maximum Power Gain Performance," IEEE Transactions on Electron Devices, vol. 41, no. 4, pp. 465-475 , 1994.
15. V. K. Arora and M. B. Das, "Role of velocity saturation in lifting pinchoff condition in long-channel MOSFET ," Electronics Letters, vol. 25, no. 13, pp. 820-821, 1989.
16. M. Buttiker, "Role of Quantum Coherence in Series Resistors," Phys. Rev. B, Condens. Matter, no. 33, pp. 3020-3026, 1986.
17. J. Lusakowski, W. Knap, Y. Meziani, J. P. Cesso, A. El Fatimy, R. Tauk, N. Dyakonova, F. Boeuf and T. Skotnicki, "Ballistic and Pocket Limitations of Mobility in Nanometer Si Metal-Oxide Semiconductor Field-Effect Transistors," Applied Physics Letters, vol. 87, p. 053507, 2005.
18. K. Natori, "Ballistic Metal-Oxide-Semiconductor Field Effect Transistor," J. Appl. Phy., vol. 76, pp. 4879-4890.
19. Jing Wang and Mark Lundstrom, "Ballistic Transport in High Electron Mobility Transistor," IEEE Transactions on Electron Devices, vol. 50, no. 7. 1604-1609.
20. Michael Shur, "Low Ballistic Mobility in Submicron HEMTs," IEEE Electron Device Letters, vol. 23, No. 9, pp. 511-513.
21. Vijay K. Arora, "Theory of Scattering-Limited and Ballistic Mobility and Saturation Velocity in Low-Dimensional Nanostructure," Current Nanosciecne, in press.
22. Michael L. P. Tan, Vijay K. Arora, Ismail Saad, Mohammad Taghi Ahmadi, and Razali Ismail, Journal of Applied Physics, in press.