Effective mobility in nanowire FETs under quasi-ballistic conditions

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 336-344

  Gnani, Elena ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Effective mobility; Momentum relaxation length; One dimensional Boltzmann transport equation (BTE); Quasiballistic transport; Silicon nanowire (NW) FET

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; EFFECTIVE MOBILITIES; EFFECTIVE MOBILITY; QUASI-BALLISTIC TRANSPORT; RELAXATION LENGTH; SILICON NANOWIRES;

BACKSCATTERING; BALLISTICS; BOLTZMANN EQUATION; DRAIN CURRENT; ELECTRON MOBILITY; MESFET DEVICES; NANOWIRES; PERIODIC STRUCTURES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 73349132342     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035545     Document Type: Article

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