Resistance blow-up effect in micro-circuit engineering

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1617-1624

  Tan, Michael L P ^a,b   Saxena, Tanuj ^c   Arora, Vijay K ^a,d  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^d WILKES UNIVERSITY   (United States)

Author keywords

Current division; I V characteristics; Micro circuits; Nonohmic current; Power degradation; RC time constants; Resistance blow up; Saturation; Voltage division

Indexed keywords

BLOW-UP; CURRENT DIVISION; IV CHARACTERISTICS; MICRO-CIRCUITS; NONOHMIC CURRENT; POWER DEGRADATION; RC TIME CONSTANTS; SATURATION; VOLTAGE DIVISION;

DC POWER TRANSMISSION; DEGRADATION; ELECTRIC BREAKDOWN; RESISTORS; TIME SWITCHES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77957321479     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.06.024     Document Type: Article

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