The high-field drift velocity in degenerately-doped silicon nanowires

International Journal of Nanotechnology

Volumn 6, Issue 7-8, 2009, Pages 601-617

  Ahmadi, Mohammad Taghi ^a   Tan, Michael L P ^a,b   Ismail, Razali ^a   Arora, Vijay K ^a,c  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c WILKES UNIVERSITY   (United States)

Author keywords

Degenerate statistics; Drift velocity; FET; High electric field transport; Intrinsic velocity; Mobility; Nanowire; Saturation velocity

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CARRIER TRANSPORT; DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; NANOWIRES; SILICON;

ASYMMETRICAL DISTRIBUTIONS; CARRIER DRIFT VELOCITY; DRIFT VELOCITIES; HIGH ELECTRIC FIELDS; HIGH-SPEED APPLICATIONS; INTRINSIC VELOCITY; SATURATION VELOCITY; SILICON NANOWIRE TRANSISTORS;

VELOCITY;

EID: 66749106862     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2009.025299     Document Type: Article

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