On the drain current saturation in carbon nanotube field effect transistors

Nano

Volumn 5, Issue 3, 2010, Pages 161-165

  Benfdila, A ^a,b   Abbas, S ^a   Izquierdo, R ^c   Talmat, R ^a   Vaseashta, A ^d  

^a UNIVERSITÉ MOULOUD MAMMERI   (Algeria)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^c UNIVERSITÉ DU QUÉBEC À MONTRÉAL   (Canada)

^d Institute for Advanced Science Convergence   (United States)

Author keywords

ballistic transport; CNFET; CNT; saturation regime

Indexed keywords

BALLISTIC TRANSPORTS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CIRCUIT MINIATURIZATION; CNFET; CNT; CURRENT SATURATION; ELECTRICAL CHARACTERISTIC; ELECTRONIC CIRCUITS; ELECTRONIC DEVICE; FUNCTIONAL BEHAVIORS; MOS-FET; REDUCED DIMENSIONALITY; SATURATION REGIME; SATURATION REGION;

BALLISTICS; CARBON NANOTUBES; DRAIN CURRENT; ELECTRON DEVICES; MINIATURE INSTRUMENTS; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 78649505112     PISSN: 17932920     EISSN: None     Source Type: Journal    
DOI: 10.1142/S1793292010002062     Document Type: Article

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