Ballistic electronics: Breaking the barrier in terahertz speed processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7671, Issue , 2010, Pages

  Margala, Martin ^a   Ampadu, Paul ^b   Shapir, Yonathan ^c   Sobolewski, Roman ^b,c  

^a University of Massachusetts   (United States)

^b University of Rochester   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Ballistic Conduction; Emerging Technology; Logic Gates; Terahertz Circuits

Indexed keywords

CIRCUIT DESIGN TECHNIQUES; DIFFERENT GEOMETRY; DIFFERENTIAL MODE; DRAIN-SOURCE VOLTAGE; ELECTRICAL PULSE; EMERGING TECHNOLOGIES; EMERGING TECHNOLOGY; EMPIRICAL MODEL; EXPERIMENTAL MEASUREMENTS; GATE BIAS; GATE CAPACITANCE; GATE CONTROL; GATE STRUCTURE; LARGE SCALE INTEGRATION; MEASURED RESULTS; MONTE CARLO ANALYSIS; NAND GATE; NANO-DEVICES; NEGATIVE TRANSCONDUCTANCE; NOVEL DEVICES; OUTPUT RESPONSE; PICOSECONDS; PLANAR DEVICES; PLANAR STRUCTURE; QUASI-BALLISTIC; ROOM TEMPERATURE; SPEED PROCESSING; TERA HERTZ; TERAHERTZ CIRCUITS; THZ FREQUENCIES; TIME DOMAIN SPECTROSCOPY; TRANSFER CHARACTERISTICS;

BALLISTICS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC GATES; TERAHERTZ SPECTROSCOPY; TIME DOMAIN ANALYSIS; TRANSCONDUCTANCE;

LOGIC CIRCUITS;

EID: 77953645395     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.855999     Document Type: Conference Paper

References (38)

1. A.M. Song, P. Omling, L. Samuelson, W. Seifert, I. Shorubalko and H. Zirath, "Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz" Jpn. J. Appl. Phys. 40 L 909 (2001).
2. International Roadmap for Semiconductors, 2009 http://www.itrs.net/Links/ 2009ITRS/2009Chapters-2009Tables/2009-ExecSum.pdf
3. Song A. M., Omling P., Samuelson L., Seifert W. and Shorubalko I, "Room-temperature and 50 GHz operation of a functional nanomaterial", Appl. Phys. Lett. 79, 1357 (2001).
4. Shorubalko I., Xu H. Q., Maximov I., Omling P., Samuelson L. and Seifert W., "Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions", Appl. Phys. Lett. 79, 1384 (2001).
5. Fleischmann R. and Geisel T., "Mesoscopic rectifiers based on ballistic transport", Phys. Rev. Lett. 89, 016804 (2002).
6. de Haan S., Lorke A., Kotthauss J. P., Wegscheider W. and Bichler M., "Rectification in mesoscopic systems with broken symmetry: quasiclassical ballistic versus classical transport", Phys. Rev. Lett. 92, 056806 (2004).
7. Knop M., Wieser U., Kunze U., Reuter D. and Wieck A. D., "Ballistic rectification in an asymmetric mesoscopic cross junction", Appl. Phys. Lett. 88, 082110 (2006).
8. González T., Vasallo B. G., Pardo D. and Mateos J., "Room temperature nonlinear transport in ballistic nanodevices", Semicond. Sci. Technol. 19, S125 (2004).
9. Hackens B., Gence L., G. Gustin, Wallart X., Bollaert S., Cappy A. and Bayot V. "Sign reversal and tunable rectification in a ballistic nanojuntion", Appl. Phys. Lett. 85, 4508 (2004). (Pubitemid 40001560)
10. Thomas Palm and Lars Thylen, "Designing logic functions using an electron waveguide Y-branch switch" (1995).
11. Xu H. Q., Shorubalko I., Wallin D., Maximov I., Omling P., Samuelson L. and Seifert W., "Novel nanoelectronic triodes and logic devices with TBJs", IEEE Electron Device Lett. 25, 164 (2004).
12. Reitzenstein S., Worschech L. and Forchel A., "Room temperature operation of an in-plane half-adder based on ballistic Y-junctions", IEEE Electron Device Lett. 25, 462 (2004).
13. Müller C. R, L. Worschech L., Höpfner P., Höfling S. and A. Forchel A., "Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions", IEEE Electron Device Lett. 28, 859 (2007). (Pubitemid 47521561)
14. Mateos J., Vasallo B. G., Pardo D., González T., Galloo J. S., Bollaert S., Roelens Y. and Cappy A., "Microscopic modeling of nonlinear transport in ballistic nanodevices", IEEE Trans. Electron Devices 50, 1897 (2003).
15. Mateos J., Vasallo B. G., Pardo D. and González T., "Operation and high-frecuency performance of nanoscale unipolar rectifying diodes", Appl. Phys. Lett. 86, 212103 (2005).
16. B. G. Vasallo, T. González, D. Pardo and J. Mateos, "Monte Carlo analysis of four terminal ballistic rectifiers", Nanotechnology, vol 15, S250, 2004.
17. Bednarz L., Rashmi, Farhi G., Hackens B., Bayot V. and Huynen I., "Solutions for input impedance matching of nanodevices: Application to Y-branch junction HF to DC rectifier", 1st European Microwave Integrated Circuits Conference, 5 (2006).
18. Bednarz L., Rashmi, Hackens B., Farhi G., Bayot V. and Huynen I. "Broad-band frequency characterization of double Y-branch nanojunction operating as room-temperature RF to DC rectifier", IEEE Trans on Nanotechology. 4, 576 (2005). (Pubitemid 41441353)
19. Bednarz L., Rashmi, Simon P, Huynen I, González T and Mateos J, "Negative differential transconductance and nonreciprocal effects in a Y-branch nanojunction: High-frequency analysis", IEEE Trans on Nanotechology 5, 750 (2006). (Pubitemid 44837060)
20. Bollaert S., Cappy A., Roelens Y., Galloo J. S., Gardès C., Teukam Z., Wallart X., Mateos J., González T., Vasallo B.G., Hackens B., Berdnarz L. and Huynen I., "Ballistic nano-devices for high frequency applications", Thin Solid Films 515, 4321 (2007).
21. H. Irie and R. Sobolewski, "Terahertz electrical response of nanoscale three-branch junctions," J. Appl. Phys., April (2010).
22. S. Kasai, T. Nakamura, S. F. B. A. Rahman and Y. Shiratori, "Study on nonlinear electrical characteristics of GaAs-Based Three-Branch nanowire juctions controlled by Schottky wrap gates," Jpn. J. Appl. Phys. 47, 4958 (2009).
23. S. F. B. A. Rahman, D. Nakata, Y. Shiratori, and S. Kasai, "Boolean logic gates utilizing GaAs three-branch nanowire junctions controlled by Schottky wrap gates," Jpn. J. Appl. Phys. 48, 06FD01 (2009).
24. Y. Shiratori, K. Miura, R. Jia, N. J. Wu and S. Kasai, "Compact reconfigurable binary-decision-diagram logic circuit on a GaAs nanowire network" Appl. Phys. Express 3, 025002 (2010).
25. 0.3As HEMTs with an ultrahigh ft of 562 GHz," IEEE Electron Dev. Lett. 23, 573 (2002).
26. R. Lai, X. B. Mei, W.R. Deal, W. Yoshida, Y. M. Kim, P.H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, "Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz," IEDM Technical Digest, p. 609 (2007).
27. Song A. M., Missous M., Omling P., Peaker A. R., Samuelson L. and Seifert W., "Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device", Appl. Phys. Lett. 83, 1881 (2003).
28. Song A. M., Missous M., Omling P., Maximov I., Seifert W. and Samuelson L., "Nanometer-scale two-terminal semiconductor memory operating at room temperature", Appl. Phys. Lett. 86, 042106 (2005).
29. Reitzenstein R, Worschech L, Müller C. R., and Forchel A., "Compact logic NAND-gate based on a single inplane quantum-wire transistor", IEEE Electron Device Lett. 26, 142 (2005). (Pubitemid 40400362)
30. Müller C. R, Worschech L, Schliemann A., and Forchel A., "Bias voltage controlled memory effect in on-plane quantum-wire transistors with embedded quantum dots", IEEE Electron Device Lett. 27, 955 (2006). (Pubitemid 46415844)
31. D. Wolpert, H. Irie, R Sobolewski, P. Ampadu, Q. Diduck, M. Margala, "Ballistic deflection transistors and the emerging nanoscale era " in proceedings of IEEE Symposium on Circuits and Systems, pp. 61-64, 2009.
32. V. Kaushal, I. Iñiguez-de-la-Torre, H. Irie, Gregg Guarino, W. R. Donaldson, P. Ampadu, R. Sobolewski, and M. Margala, " A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor", IEEE Transactions on Nanotechnology, accepted for publication in January 2010.
33. D. Wolpert, Q. Diduck, P. Ampadu,"NAND Gate Design for Balistic Deflection Transistors", IEEE Transactions on Nanotechnology (in Press)
34. C. Jacoboni. and P. Lugli., The Monte Carlo method for semiconductor device simulation, (Springer-Verlag, New York, 1989).
35. J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo., Y. Roelens, S. Bollaert and A. Cappy, "Ballistic nanodevices for terahertz data processing: Monte Carlo simulations", Nanotechnology, vol 14, 117, 2003.
36. H. Irie, Q. Diduck, M. Margala, R. Sobolewski, and M. J. Feldman, "Nonlinear characteristics of T-branch junctions: transition from ballistic to diffusive regime," Appl. Phys. Lett. vol. 93, 053502, 2008.
37. D. H. Auston, "Impulse response of photoconductors in transmission lines", IEEE J. Quantum Electron., vol. QE- 19, 639, 1983.
38. J. A. Valdmanis, G. Mourou, and C. W. Gabel, "Picosecond electro-optic sampling system," Appl. Phys. Lett., vol. 41, 211, 1982.