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Volumn 54, Issue 1, 2011, Pages 34-40

Microcircuit modeling and simulation beyond Ohm's law

Author keywords

Circuit analysis; micro nano channels; MOSFET; nonlinear IV; resistance surge; simulation; SPICE; very large scale integration

Indexed keywords

CIRCUIT ANALYSIS; MICRO/NANO CHANNELS; MOS-FET; NONLINEAR IV; RESISTANCE SURGE; SIMULATION; VERY LARGE-SCALE INTEGRATION;

EID: 79551616244     PISSN: 00189359     EISSN: None     Source Type: Journal    
DOI: 10.1109/TE.2010.2041932     Document Type: Article
Times cited : (15)

References (28)
  • 1
    • 70349634211 scopus 로고    scopus 로고
    • Engineering the soul of management in the nano era
    • V. K. Arora, "Engineering the soul of management in the nano era," Chin. Manag. Studies (Emerald J.), vol. 3, no. 3, pp. 213-234, 2009.
    • (2009) Chin. Manag. Studies (Emerald J.) , vol.3 , Issue.3 , pp. 213-234
    • Arora, V.K.1
  • 2
    • 0742320309 scopus 로고    scopus 로고
    • 21st century engineer-entrepreneur
    • Oct.
    • V. K. Arora and L. Faraone, "21st century engineer-entrepreneur, " IEEE Antennas Propag. Mag., vol. 45, no. 5, pp. 106-114, Oct. 2003.
    • (2003) IEEE Antennas Propag. Mag. , vol.45 , Issue.5 , pp. 106-114
    • Arora, V.K.1    Faraone, L.2
  • 5
    • 0027541147 scopus 로고
    • Computer-aided engineering in microelectronic processes and design in Singapore
    • Feb.
    • V. K. Arora and G. Samudra, "Computer-aided engineering in microelectronic processes and design in Singapore," IEEE Trans. Educ., vol. 36, no. 1, pp. 148-152, Feb. 1993.
    • (1993) IEEE Trans. Educ. , vol.36 , Issue.1 , pp. 148-152
    • Arora, V.K.1    Samudra, G.2
  • 7
    • 0028483554 scopus 로고
    • Velocity saturation in the extrinsic device: A fundamental limit in HFET's
    • Aug.
    • D. R. Greenberg and J. A. del Alamo, "Velocity saturation in the extrinsic device: A fundamental limit in HFET's," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1334-1339, Aug. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.8 , pp. 1334-1339
    • Greenberg, D.R.1    Del Alamo, J.A.2
  • 8
    • 0025483563 scopus 로고
    • Effect of electric-field-induced mobility degradation on the velocity distribution in a submicron-length channel of InGaAs/AlGaAs heterojunction MODFET
    • V. K. Arora and M. B. Das, "Effect of electric-field-induced mobility degradation on the velocity distribution in a submicron-length channel of InGaAs/AlGaAs heterojunction MODFET," Semicond. Sci. Technol., vol. 5, p. 967, 1990.
    • (1990) Semicond. Sci. Technol. , vol.5 , pp. 967
    • Arora, V.K.1    Das, M.B.2
  • 9
    • 61349138761 scopus 로고    scopus 로고
    • Scattering-limited and ballistic transport in a nano-CMOS circuit
    • I. Saad et al., "Scattering-limited and ballistic transport in a nano-CMOS circuit," Microelectron. J., vol. 40, pp. 581-583, 2009.
    • (2009) Microelectron. J. , vol.40 , pp. 581-583
    • Saad, I.1
  • 10
    • 34548483386 scopus 로고    scopus 로고
    • Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
    • V. K. Arora, M. L. P. Tan, I. Saad, and R. Ismail, "Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor," Appl. Phys. Lett., vol. 91, p. 103510, 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 103510
    • Arora, V.K.1    Tan, M.L.P.2    Saad, I.3    Ismail, R.4
  • 11
    • 65249100083 scopus 로고    scopus 로고
    • The drain velocity overshoot in an 80-nm metal-oxide-semiconductor fieldeffect-transistor
    • M. L. P. Tan, V. K. Arora, I. Saad, M. T. Ahmadi, and R. Ismail, "The drain velocity overshoot in an 80-nm metal-oxide-semiconductor fieldeffect-transistor," J. Appl. Phys., vol. 105, p. 074503, 2009.
    • (2009) J. Appl. Phys. , vol.105 , pp. 074503
    • Tan, M.L.P.1    Arora, V.K.2    Saad, I.3    Ahmadi, M.T.4    Ismail, R.5
  • 12
    • 61349138761 scopus 로고    scopus 로고
    • Scattering-limited and ballistic transport in a nano-CMOS circuit
    • I. Saad, M. L. P. Tan, A. C. E. Lee, R. Ismail, and V. K. Arora, "Scattering-limited and ballistic transport in a nano-CMOS circuit," Microelectron. J., vol. 40, pp. 581-583, 2009.
    • (2009) Microelectron. J. , vol.40 , pp. 581-583
    • Saad, I.1    Tan, M.L.P.2    Lee, A.C.E.3    Ismail, R.4    Arora, V.K.5
  • 13
    • 79551643416 scopus 로고    scopus 로고
    • Investigation on the effects of oblique rotating ion implantation (ORI) method for nanoscale vertical double gate NMOSFET
    • I. Saad, R. Ismail, and V. K. Arora, "Investigation on the effects of oblique rotating ion implantation (ORI) method for nanoscale vertical double gate NMOSFET," Solid State Sci. Technol. Lett., vol. 15, no. 2, pp. 69-76, 2008.
    • (2008) Solid State Sci. Technol. Lett. , vol.15 , Issue.2 , pp. 69-76
    • Saad, I.1    Ismail, R.2    Arora, V.K.3
  • 15
    • 0034509141 scopus 로고    scopus 로고
    • Quantum engineering of nanoelectronic devices: The role of quantum emission in limiting drift velocity and diffusion coefficient
    • V. K. Arora, "Quantum engineering of nanoelectronic devices: The role of quantum emission in limiting drift velocity and diffusion coefficient," Microelectron. J., vol. 31, no. 11-12, pp. 853-859, 2000.
    • (2000) Microelectron. J. , vol.31 , Issue.11-12 , pp. 853-859
    • Arora, V.K.1
  • 16
    • 0022064896 scopus 로고
    • High field distribution and mobility in semiconductors
    • V. K. Arora, "High field distribution and mobility in semiconductors," Jpn. J. Appl. Phys., vol. 24, p. 537, 1985.
    • (1985) Jpn. J. Appl. Phys. , vol.24 , pp. 537
    • Arora, V.K.1
  • 17
    • 55849151720 scopus 로고    scopus 로고
    • The ultimate ballistic drift velocity in a carbon nanotubes
    • M. T. Ahmadi, R. Ismail, and V. K. Arora, "The ultimate ballistic drift velocity in a carbon nanotubes," J. Nanomater., p. 8, 2008.
    • (2008) J. Nanomater. , pp. 8
    • Ahmadi, M.T.1    Ismail, R.2    Arora, V.K.3
  • 18
    • 79955982418 scopus 로고    scopus 로고
    • Drift-diffusion and einstein relation for electrons in silicon subjected to a high electric field
    • V. K. Arora, "Drift-diffusion and einstein relation for electrons in silicon subjected to a high electric field," Appl. Phys. Lett., vol. 80, no. 20, pp. 3763-3765, 2002.
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.20 , pp. 3763-3765
    • Arora, V.K.1
  • 19
    • 70350627408 scopus 로고    scopus 로고
    • Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures
    • V. K. Arora, "Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures," Current Nanosci., vol. 5, pp. 227-231, 2009.
    • (2009) Current Nanosci , vol.5 , pp. 227-231
    • Arora, V.K.1
  • 20
    • 77949361761 scopus 로고    scopus 로고
    • Nano-CMOS circuit design and performance evaluation by inclusion of ballistic transport processes
    • College Park, MD, Dec. 9-11
    • D. C. Y. Chek, M. L. P. Tan, and V. K. Arora, "Nano-CMOS circuit design and performance evaluation by inclusion of ballistic transport processes," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
    • (2009) Proc. ISDRS
    • Chek, D.C.Y.1    Tan, M.L.P.2    Arora, V.K.3
  • 21
    • 77949372676 scopus 로고    scopus 로고
    • Ballistic mobility degradation in scaled-down channel of a MOSFET
    • College Park, MD, Dec. 9-11
    • M. Riyadi, C. Pollard, and V. K. Arora, "Ballistic mobility degradation in scaled-down channel of a MOSFET," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
    • (2009) Proc. ISDRS
    • Riyadi, M.1    Pollard, C.2    Arora, V.K.3
  • 22
    • 77949350485 scopus 로고    scopus 로고
    • The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor
    • College Park, MD, Dec. 9-11
    • V. K. Arora, A. M. bin Hashim, D. Chek, and T. Saxena, "The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
    • (2009) Proc. ISDRS
    • Arora, V.K.1    Bin Hashim, A.M.2    Chek, D.3    Saxena, T.4
  • 23
    • 77949391044 scopus 로고    scopus 로고
    • High-field initiated ballistic transport in carbon nanotubes
    • College Park, MD, Dec. 9-11
    • M. L. P. Tan, R. Vidhi, T. Saxena, D. C. Y. Chek, and V. K. Arora, "High-field initiated ballistic transport in carbon nanotubes," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
    • (2009) Proc. ISDRS
    • Tan, M.L.P.1    Vidhi, R.2    Saxena, T.3    Chek, D.C.Y.4    Arora, V.K.5
  • 24
    • 77957295632 scopus 로고    scopus 로고
    • High-electric-field initiated information processing in nanoelectronic devices
    • S. Anwar, Ed. Boca Raton, FL: CRC/, Taylor & Francis
    • V. K. Arora, "High-electric-field initiated information processing in nanoelectronic devices," in Nanotechnology for Telecommunications Handbook, S. Anwar, Ed. Boca Raton, FL: CRC/Taylor & Francis, 2010.
    • (2010) Nanotechnology for Telecommunications Handbook
    • Arora, V.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.