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1
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70349634211
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Engineering the soul of management in the nano era
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V. K. Arora, "Engineering the soul of management in the nano era," Chin. Manag. Studies (Emerald J.), vol. 3, no. 3, pp. 213-234, 2009.
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Arora, V.K.1
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21st century engineer-entrepreneur
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V. K. Arora and L. Faraone, "21st century engineer-entrepreneur, " IEEE Antennas Propag. Mag., vol. 45, no. 5, pp. 106-114, Oct. 2003.
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IEEE Antennas Propag. Mag.
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Arora, V.K.1
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0027541147
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Computer-aided engineering in microelectronic processes and design in Singapore
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Feb.
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V. K. Arora and G. Samudra, "Computer-aided engineering in microelectronic processes and design in Singapore," IEEE Trans. Educ., vol. 36, no. 1, pp. 148-152, Feb. 1993.
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Arora, V.K.1
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Velocity saturation in the extrinsic device: A fundamental limit in HFET's
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D. R. Greenberg and J. A. del Alamo, "Velocity saturation in the extrinsic device: A fundamental limit in HFET's," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1334-1339, Aug. 1994.
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Greenberg, D.R.1
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0025483563
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Effect of electric-field-induced mobility degradation on the velocity distribution in a submicron-length channel of InGaAs/AlGaAs heterojunction MODFET
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V. K. Arora and M. B. Das, "Effect of electric-field-induced mobility degradation on the velocity distribution in a submicron-length channel of InGaAs/AlGaAs heterojunction MODFET," Semicond. Sci. Technol., vol. 5, p. 967, 1990.
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Arora, V.K.1
Das, M.B.2
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9
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61349138761
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Scattering-limited and ballistic transport in a nano-CMOS circuit
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I. Saad et al., "Scattering-limited and ballistic transport in a nano-CMOS circuit," Microelectron. J., vol. 40, pp. 581-583, 2009.
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Microelectron. J.
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Saad, I.1
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10
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34548483386
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Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
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V. K. Arora, M. L. P. Tan, I. Saad, and R. Ismail, "Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor," Appl. Phys. Lett., vol. 91, p. 103510, 2007.
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Arora, V.K.1
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11
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65249100083
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The drain velocity overshoot in an 80-nm metal-oxide-semiconductor fieldeffect-transistor
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M. L. P. Tan, V. K. Arora, I. Saad, M. T. Ahmadi, and R. Ismail, "The drain velocity overshoot in an 80-nm metal-oxide-semiconductor fieldeffect-transistor," J. Appl. Phys., vol. 105, p. 074503, 2009.
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Tan, M.L.P.1
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12
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61349138761
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Scattering-limited and ballistic transport in a nano-CMOS circuit
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I. Saad, M. L. P. Tan, A. C. E. Lee, R. Ismail, and V. K. Arora, "Scattering-limited and ballistic transport in a nano-CMOS circuit," Microelectron. J., vol. 40, pp. 581-583, 2009.
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Microelectron. J.
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Saad, I.1
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Lee, A.C.E.3
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Arora, V.K.5
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13
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79551643416
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Investigation on the effects of oblique rotating ion implantation (ORI) method for nanoscale vertical double gate NMOSFET
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I. Saad, R. Ismail, and V. K. Arora, "Investigation on the effects of oblique rotating ion implantation (ORI) method for nanoscale vertical double gate NMOSFET," Solid State Sci. Technol. Lett., vol. 15, no. 2, pp. 69-76, 2008.
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Saad, I.1
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15
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0034509141
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Quantum engineering of nanoelectronic devices: The role of quantum emission in limiting drift velocity and diffusion coefficient
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V. K. Arora, "Quantum engineering of nanoelectronic devices: The role of quantum emission in limiting drift velocity and diffusion coefficient," Microelectron. J., vol. 31, no. 11-12, pp. 853-859, 2000.
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Microelectron. J.
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Arora, V.K.1
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16
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0022064896
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High field distribution and mobility in semiconductors
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V. K. Arora, "High field distribution and mobility in semiconductors," Jpn. J. Appl. Phys., vol. 24, p. 537, 1985.
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Jpn. J. Appl. Phys.
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Arora, V.K.1
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17
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55849151720
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The ultimate ballistic drift velocity in a carbon nanotubes
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M. T. Ahmadi, R. Ismail, and V. K. Arora, "The ultimate ballistic drift velocity in a carbon nanotubes," J. Nanomater., p. 8, 2008.
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J. Nanomater.
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Ahmadi, M.T.1
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18
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79955982418
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Drift-diffusion and einstein relation for electrons in silicon subjected to a high electric field
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V. K. Arora, "Drift-diffusion and einstein relation for electrons in silicon subjected to a high electric field," Appl. Phys. Lett., vol. 80, no. 20, pp. 3763-3765, 2002.
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Arora, V.K.1
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Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures
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V. K. Arora, "Theory of scattering-limited and ballistic mobility and saturation velocity in low-dimensional nanostructures," Current Nanosci., vol. 5, pp. 227-231, 2009.
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Arora, V.K.1
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77949361761
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Nano-CMOS circuit design and performance evaluation by inclusion of ballistic transport processes
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College Park, MD, Dec. 9-11
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D. C. Y. Chek, M. L. P. Tan, and V. K. Arora, "Nano-CMOS circuit design and performance evaluation by inclusion of ballistic transport processes," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
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Proc. ISDRS
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Chek, D.C.Y.1
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21
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77949372676
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Ballistic mobility degradation in scaled-down channel of a MOSFET
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College Park, MD, Dec. 9-11
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M. Riyadi, C. Pollard, and V. K. Arora, "Ballistic mobility degradation in scaled-down channel of a MOSFET," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
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Proc. ISDRS
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Riyadi, M.1
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22
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77949350485
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The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor
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College Park, MD, Dec. 9-11
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V. K. Arora, A. M. bin Hashim, D. Chek, and T. Saxena, "The impact of the breakdown of Ohm's law on switching delay due to reactive elements connected in series with a micro/nano-resistor," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
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Proc. ISDRS
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77949391044
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High-field initiated ballistic transport in carbon nanotubes
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College Park, MD, Dec. 9-11
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M. L. P. Tan, R. Vidhi, T. Saxena, D. C. Y. Chek, and V. K. Arora, "High-field initiated ballistic transport in carbon nanotubes," in Proc. ISDRS, College Park, MD, Dec. 9-11, 2009.
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Proc. ISDRS
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Tan, M.L.P.1
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24
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High-electric-field initiated information processing in nanoelectronic devices
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S. Anwar, Ed. Boca Raton, FL: CRC/, Taylor & Francis
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V. K. Arora, "High-electric-field initiated information processing in nanoelectronic devices," in Nanotechnology for Telecommunications Handbook, S. Anwar, Ed. Boca Raton, FL: CRC/Taylor & Francis, 2010.
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