Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt

ACS Nano

Volumn 5, Issue 4, 2011, Pages 2723-2734

  Jung, Byung Jun ^a,e   Martinez Hardigree, Josue F ^a   Dhar, Bal Mukund ^a   Dawidczyk, Thomas J ^a   Sun, Jia ^a,c   See, Kevin Cua ^a,d   Katz, Howard E ^a,b  

^a Johns Hopkins University   (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

^c SEAGATE TECHNOLOGY   (United States)

^d Lux Research   (United States)

^e University of Seoul   (South Korea)

Author keywords

capacitance; dielectric; MIS; NTCDI; organic semiconductor; organic transistor; sensor; sheet transconductance

Indexed keywords

DIELECTRIC; MIS; NTCDI; ORGANIC SEMICONDUCTOR; ORGANIC TRANSISTOR; SHEET TRANSCONDUCTANCE;

CAPACITANCE; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRODES; GATE DIELECTRICS; GATES (TRANSISTOR); GOLD COATINGS; OXIDE FILMS; SEMICONDUCTING SILICON; SENSORS; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 79955367134     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn103115h     Document Type: Article

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