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Advanced Materials

Volumn 19, Issue 20, 2007, Pages 3322-3327

Enhanced response of n-channel naphthalenetetracarboxylic diimide transistors to dimethyl methylphosphonate using phenolic receptors

(4) See, Kevin C a Becknell, Alan b Miragliotta, Joseph b Katz, Howard E a

a Johns Hopkins University (United States)

b JOHNS HOPKINS UNIVERSITY APPLIED PHYSICS LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRODES; FUNCTIONAL GROUPS; SENSORS; SILICA;

DIMETHYL METHYLPHOSPHONATE; GATE ELECTRODE; NAPHTHALENETETRACARBOXYLIC DIIMIDE; PHENOLIC RECEPTORS;

NAPHTHALENE;

EID: 35748964437 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200602924 Document Type: Article

Times cited : (59)

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