Characterization of MOS structures based on poly (3,3‴-dialkyl- quaterthiophene)

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2150-2156

  Zhao, Ni ^b   Marinov, Ognian ^c   Botton, Gianluigi A ^c   Deen, M Jamal ^a,c   Ong, Beng S ^d   Wu, Y ^d   Liu, P ^d  

^a IEEE   (Canada)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c MCMASTER UNIVERSITY   (Canada)

^d XEROX RESEARCH CENTRE OF CANADA   (Canada)

Author keywords

Capacitance voltage (C V) characteristics; Charge accumulation; Charge enhancement; Dynamic capacitance voltage (C V); Polymer field effect transistors (FETs); Polymer thin film transistors (TFTs); Polymer transistors; Quasi static capacitance voltage (C V)

Indexed keywords

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; CHARGE ACCUMULATION; CHARGE ENHANCEMENT; DYNAMIC CAPACITANCE-VOLTAGE (C-V); POLYMER FIELD-EFFECT TRANSISTORS (FET); POLYMER TRANSISTORS; QUASI-STATIC CAPACITANCE-VOLTAGE (C-V);

CAPACITANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; RELAXATION PROCESSES; SURFACE TREATMENT; VOLTAGE MEASUREMENT;

MOS DEVICES;

EID: 33646570801     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856172     Document Type: Article

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