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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Effects of gallium doping on properties of a -plane ZnO films on r -plane sapphire substrates by plasma-assisted molecular beam epitaxy

(9) Han, Seok Kyu a Lee, Hyo Sung a Lim, Dong Seok a Hong, Soon Ku a Yoon, Nara b Oh, Dong Cheol b Ahn, Byung Jun c Song, Jung Hoon c Yao, Takafumi d

a Chungnam National University (South Korea)

b Hoseo University (South Korea)

c Kongju National University (South Korea)

d TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; CELL TEMPERATURE; DEEP LEVEL EMISSION; DOPED SAMPLE; ELECTRICAL PROPERTY; ELECTRON CONCENTRATION; GA DOPING; GA-DOPED; GA-DOPED ZNO; GALLIUM DOPING; HALL MEASUREMENTS; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE; POLYCRYSTALLINE ZNO; ROOM TEMPERATURE; SINGLE-CRYSTALLINE; VAN DER PAUW METHOD; X RAY ROCKING CURVE; ZNO FILMS;

CARRIER CONCENTRATION; CELLS; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; GALLIUM; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DOPING; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 79955143287 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3562162 Document Type: Article

Times cited : (3)

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