Interface and defect structures in ZnO films on m-plane sapphire substrates

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 238-244

  Lee, Jae Wook ^a   Kim, Jung Hyun ^b   Han, Seok Kyu ^b   Hong, Soon Ku ^b   Lee, Jeong Yong ^a   Hong, Sun Ig ^b   Yao, Takafumi ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chungnam National University   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A1. Defects; A1. Interfaces; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A1. CHARACTERIZATION; A1. DEFECTS; A1. INTERFACES; B1. ZINC COMPOUNDS; SEMICONDUCTING II-VI MATERIALS;

BURGERS VECTOR; CORUNDUM; CRYSTAL GROWTH; DEFECTS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS; SUBSTRATES; TRANSITION METAL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

MOLECULAR BEAMS;

EID: 71649104176     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.023     Document Type: Article

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