Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Noh, Jun Hong ^a   Jung, Hyun Suk ^b   Lee, Jung Kun ^c   Kim, Jin Young ^d   Cho, Chin Moo ^a   An, Jae Sul ^a   Hong, Kug Sun ^a  

^a Seoul National University   (South Korea)

^b Kookmin University   (South Korea)

^c University of Pittsburgh   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; ANNEALING; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CORUNDUM; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; NUMERICAL ANALYSIS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; ZINC ALLOYS; ZINC OXIDE;

AZO FILMS; CONDUCTIVITY CHANGES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTING PROPERTIES; ELECTRICAL CONDUCTIVITIES; ELECTRICAL RESISTIVITIES; EPITAXIALLY GROWN; LOW RESISTIVITIES; MATERIAL PARAMETERS; PHOTOLUMINESCENCE STUDIES; PULSED LASERS; REVERSIBLE CHANGES; REVERSIBLE CONTROLS; SUBSEQUENT ANNEALING; ZNO THIN FILMS;

CONDUCTIVE FILMS;

EID: 54049105690     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2987472     Document Type: Article

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