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Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy

(3) Yang, Z a Look, D C b Liu, J L a

a UNIVERSITY OF CALIFORNIA (United States)

b WRIGHT STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRAIN; CARRIER CONCENTRATION; CRYSTAL GROWTH; EXCITONS; GALLIUM; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; ZINC OXIDE;

DONOR ACCEPTORS; DONOR-BOUND EXCITONS; GA-DOPED ZNO; LOW-TEMPERATURE PHOTOLUMINESCENCES; MOLECULAR-BEAM EPITAXIES; PAIR TRANSITIONS; PHOTOLUMINESCENCE LINES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; QUANTITATIVE ANALYSIS; TEMPERATURE DEPENDENTS; THEORETICAL CALCULATIONS; TWO-ELECTRON SATELLITES;

ZINC;

EID: 60749092862 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3080204 Document Type: Article

Times cited : (51)

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