High-quality p-type ZnO films grown by Co-doping of N and Te on Zn-face ZnO substrates

Applied Physics Express

Volumn 3, Issue 3, 2010, Pages

  Park, Seunghwan ^a,b   Minegishi, Tsutomu ^a   Oh, Dongcheol ^c   Lee, Hyunjae ^a   Taishi, Toshinori ^d   Park, Jinsub ^a   Jung, Mina ^e   Chang, Jiho ^e   Im, Inho ^a   Ha, Junseok ^f   Hong, Soonku ^g   Yonenaga, Ichiro ^d   Chikyow, Toyohiro ^b   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Hoseo University   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

^e Korea Maritime University   (South Korea)

^f Chonnam National University   (South Korea)

^g Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITON; CO-DOPED ZNO; CO-DOPING; EMISSION LINES; HIGH QUALITY; N-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; P-TYPE ZNO FILM; P-TYPE ZNO LAYERS; PHOTOLUMINESCENCE PROPERTIES; ZNO; ZNO SUBSTRATE;

BINDING ENERGY; COBALT; COMMUNICATION CHANNELS (INFORMATION THEORY); DOPING (ADDITIVES); ELECTROMAGNETIC WAVE EMISSION; HOLE CONCENTRATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TELLURIUM; TELLURIUM COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 77949838344     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.031103     Document Type: Article

References (14)

1. A. Nakagawa, T. Abe, S. Chiba, H. Endo, K. Meguro, Y. Kashiwaba, T. Ojima, K. Aota, I. Niikura, Y. Kashiwaba, and T. Fujiwara: Phys. Status Solidi C 6 (2009) S119.
2. M. Komatsu, N. Ohashi, I. Sakaguchi, S. Hishita, and H. Haneda: Appl. Surf. Sci. 189 (2002) 349.
3. T. Yamamoto and H. Katayama-Yashida: Jpn. J. Appl. Phys. 38 (1999) L166.
4. K. Nakahara, H. Takasu, P. Fons, A. Yamada, K. Iwata, K. Matsubara, R. Hunger, and S. Niki: J. Cryst. Growth 237 (2002) 503.
5. H. D. Jung, C. D. Song, S. Q. Wang, K. Arai, Y. H. Wu, Z. Zhu, T. Yao, and H. Katayama-Yoshida: Appl. Phys. Lett. 70 (1997) 1143.
6. H. L. Porter, A. L. Cai, J. F. Muth, and J. Narayan: Appl. Phys. Lett. 86 (2005) 211918.
7. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A. V. Rodina: Phys. Status Solidi B 241 (2004) 231.
8. W. R. Liu, Y. H. Li, W. F. Hsieh, C. H. Hsu, W. C. Lee, M. Hong, and J. Kwo: J. Phys. D 41 (2008) 065105.
9. A. Zeuner, H. R. Alves, D. M. Hofmann, B. K. Meyer, A. Hoffmann, U. Haboeck, M. Straßburg, and M. Dworza: Phys. Status Solidi B 234 (2002) R7.
10. J. Lu, Q. Liang, Y. Zhang, Z. Ye, and S. Fujita: J. Phys. D 40 (2007) 3177.
11. I. Suemune, A. B. M. A. Ashrafi, M. Ebihara, M. Kurimoto, H. Kumano, T. Y. Seong, B. J. Kim, and Y. W. Ok: Phys. Status Solidi B241 (2004) 640.
12. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell: Appl. Phys. Lett. 81 (2002) 1830.
13. J. G. Ma, Y. C. Liu, R. Mu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan: J. Vac. Sci. Technol. B 22 (2004) 94.
14. S. J. Jiao, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. H. Li, Zh. H. Zheng, B. Yao, J. Y. Zhang, D. X. Zhao, and X. W. Fan: J. Lumin. 122 (2007) 368.