Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

Acta Materialia

Volumn 58, Issue 3, 2010, Pages 1097-1103

  Pant, P ^a   Budai, J D ^b   Narayan, J ^a  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Anisotropic strain; Epitaxy; Nonpolar; TEM; X ray

Indexed keywords

A-PLANE; ANISOTROPIC STRAIN; ANISOTROPIC STRAIN RELAXATION; BASAL PLANES; BIAXIAL STRAINS; DISLOCATION NUCLEATION; FILM STRAIN; HEXAGONAL SYMMETRY; IN-PLANE; IN-PLANE STRAINS; LATTICE MISFITS; LATTICE PARAMETERS; MATRIX; MISFIT STRAINS; NON-POLAR; PLANE SAPPHIRE; PLASTIC RELAXATION; SLIP DISLOCATION; STRAIN RELAXATION MECHANISM; STRESS DIRECTIONS; TEM; X-RAY DIFFRACTION MEASUREMENTS; ZNO; ZNO FILMS;

ANISOTROPY; CORUNDUM; CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN CONTROL; STRAIN RELAXATION; SULFUR COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

STRAIN;

EID: 72449144276     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.10.026     Document Type: Article

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