Growth and characterizations of nonpolar [1 1 -2 0] ZnO on [1 0 0] (La,Sr)(Al,Ta)O3 substrate by chemical vapor deposition

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1170-1174

  Chou, Mitch M C ^a   Hang, Da Ren ^a   Chuan Wang, Shih ^a   Chen, Chenlong ^a   Lee, Chun Yu ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

A2. Czochralski method; A3. Chemical vapor deposition processes; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

A-PLANE; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; CHEMICAL VAPOR DEPOSITION METHODS; CHEMICAL VAPOR DEPOSITION PROCESS; CZOCHRALSKI METHODS; GREEN BAND; GROWTH CHARACTERISTIC; LATTICE-MATCHED; NEAR BAND EDGE EMISSIONS; NON-POLAR; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTING II-VI MATERIALS; TRANSMISSION ELECTRON MICROSCOPE; ZNO; ZNO FILMS;

ELECTRON MICROSCOPES; HOLOGRAPHIC INTERFEROMETRY; METALLIC FILMS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TANTALUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 77949598909     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.006     Document Type: Article

References (21)

1. Ohta H., Mizoguchi H., Hirano M., Narushima S., Kamiya T., and Hosono H. Appl. Phys. Lett. 82 (2003) 823
2. Chen Y.F., Hong S.K., Ko H.J., Nakajima M., Yao T., and Segawa Y. Appl. Phys. Lett. 76 (2000) 245
3. Tsukazaki A., Kubota M., Ohtomo A., Onuma T., Ohtani K., Ohno H., Chichibu S.F., and Kawasaki M. Jpn. J. Appl. Phys. 44 (2005) L643
4. Tsukazaki A., Ohtomo A., Ohnuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Mater. 4 (2005) 42
5. Yamanouchi K., Kotani K., and Yao H. Jpn. J. Appl. Phys. 37 (1998) 2887
6. Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature. 406 (2000) 865
7. Vaschenko G., Patel D., Menoni C.S., Gardner N.F., Sun J., Götz W., Tomé C.N., and Clausen B. Phys. Rev. B 64 (2001) 241308
8. Makino T., Ohtomo A., Chia C.H., Segawa Y., Koinuma H., and Kawasaki M. Physica E 21 (2004) 671
9. Perez J.Z., Sanjose V.M., Lidon E.P., and Colchero J. Phys. Rev. Lett. 95 (2005) 226105
10. Koida T., Chichibu S.F., Uedono A., Sota T., Tsukazaki A., and Kawasaki M. Appl. Phys. Lett. 84 (2004) 1079
11. Chou M.M.C., Chang L.W., Hang D.R., Chenm C.L., Chang D.S., and Li C.A. Crystal Growth & Design 9 5 (2009) 2083
12. Chou M.M.C., Chang L.W., Chung H.Y., Huang T.H., Wu J.J., and Chen C.W. J. Crystal Growth 308 (2007) 412
13. Moriyama T., and Fujita S. Jpn. J. Appl. Phys. 44 (2005) 7919
14. Matsui H., and Tabata H. Appl. Phys. Lett. 87 (2005) 143109
15. Matsui H., and Tabata H. J. Appl. Phys. 99 (2006) 124307
16. Chou M.M.C., Chen C.L., Yang S.S., Huang C.H., and Huang H.L. J. Phys. Chem. Solids 69 (2008) 425
17. Mateika D., Kohler H., Laudan H., and Volkel E. J. Crystal Growth 109 (1991) 447
18. Sakowska H., Swirkowicz M., Mazur K., Lukasiewicz T., and Witek A. Cryst. Res. Technol. 36 (2001) 851
19. Nakamura T., Minoura H., and Muto H. Thin Solid Films 405 (2002) 109
20. Ying M.J., Du X.L., Liu Y.Z., Zhou Z.T., Zeng Z.Q., Mei Z.X., Jia J.F., Chen H., Xue Q.K., and Zhang Z. Appl. Phys. Lett. 87 (2005) 202107
21. Vanheusden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnade B.E. J. Appl. Phys. 79 (1996) 7983