Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6079-6082

  Lin, Hui ^a,b   Zhou, Shengming ^a   Zhou, Jianhua ^a,b   Liu, Xuedong ^c   Gu, Shulin ^c   Zhu, Shunming ^c   Xie, Zili ^c   Han, Ping ^c   Zhang, Rong ^c  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

LiAlO2 (302) substrates; a plane ZnO thin films; Atomic force miscroscopy; Metal organic chemical vapor deposition; Raman spectroscopy; Structural and optical properties; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; RAMAN SPECTROSCOPY; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

IN-PLANE OPTICAL ANISOTROPY; LATERAL GROWTH RATE; STRUCTURAL AND OPTICAL PROPERTIES;

THIN FILMS;

EID: 44649186224     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.128     Document Type: Article

References (16)

1. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Matters 4 (2005) 42
2. Zhuge F., Zhu L.P., Ye Z.Z., Ma D.W., Lu J.G., Huang J.Y., Wang F.Z., and Ji Z.G. Appl. Phys. Lett. 87 (2005) 092103
3. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
4. Zhang Y.S., Yu K., Ouyang S.X., and Zhu Z.Q. Phys. B 382 (2006) 76
5. Jeong W.J., Kim S.K., and Park G.C. Thin Solid Films 506 (2006) 180
6. McLaurin M., Mates T.E., and Speck J.S. Appl. Phys. Lett. 86 (2005) 262104
7. Zúñiga-Pérez J., Muñoz-Sanjosé V., Palacios-Lidón E., and Colchero J. Appl. Phys. Lett. 88 (2006) 261912
8. Zúñiga-Pérez J., Muñoz-Sanjosé V., Palacios-Lidón E., and Colchero J. Phys. Rev. Lett. 95 (2005) 226105
9. Nakamura S., Senoh M., Nagahama S.I., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., and Chocho K. Jpn. J. Appl. Phys. 37 (1998) L309
10. Elsner J., Frauenheim T., Haugk M., Gutierrez R., Jones R., and Heggie M.I. In: Pearton S.J., Kuo C., Uenoyama T., and Wright A.F. (Eds). GaN and Related Alloys, Boston, USA, November 29-December 4, 1998. Mater. Res. Soc. Symp. Proc. vol. 537 (1999) 29
11. Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature (Lond.) 406 (2000) 865
12. Zou J., Zhou S.M., Xu J., Zhang L.H., Xie Z.L., Han P., and Zhang R. J. Appl. Phys. 98 (2005) 084909
13. Tripathy S., Chua S.J., Chen P., and Miao L. J. Appl. Phys. 92 (2002) 3503
14. Mitra S.S., Brafman O., Daniels W.B., and Crawford R.K. Phys. Rev. 186 (1969) 942
15. Exarhos G.J., and Sharma S.K. Thin Solid Films 270 (1995) 27
16. Joseph M., Tabata H., and Kawai T. Jpn. J. Appl. Phys. 38 (1999) 1205