메뉴 건너뛰기




Volumn 309, Issue 2, 2007, Pages 121-127

Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ANISOTROPY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; STRUCTURAL PROPERTIES; SUBSTRATES;

EID: 36049004670     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.025     Document Type: Article
Times cited : (92)

References (20)
  • 14
    • 36049020851 scopus 로고    scopus 로고
    • There seems to be only a difference in the slit size used. We used a larger slit of 6.65 mm and they used a 1.2 mm slit. Nominally larger slit gives a little bit increase of FWHM than smaller one, which support the higher crystalline property in our case too.
  • 20
    • 36049031078 scopus 로고    scopus 로고
    • F. H. Pollak, in: M. Balkanski (Ed.), Handbook on Semiconductors, vol. 2, North-Holland, Oxford, 1994.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.