Comparison of non-polar ZnO (1 1 over(2, -) 0) films deposited on single crystal ZnO (1 1 over(2, -) 0) and sapphire (0 1 over(1, -) 2) substrates

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 477-480

  Kashiwaba, Y ^a,b   Abe, T ^a,b   Onodera, S ^a   Masuoka, F ^b   Nakagawa, A ^b   Endo, H ^c   Niikura, I ^b  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IWATE UNIVERSITY   (Japan)

^c IWATE INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Zn compounds; B2. Semiconducting II VI materials

Indexed keywords

ATMOSPHERIC PRESSURE; DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

FULL-WIDTHS AT HALF-MAXIMUM (FWHM); HETEROEPITAXIAL GROWTH; HOMOEPITAXIAL FILMS; NEAR-BAND-EDGE EMISSION;

FILM GROWTH;

EID: 33846456985     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.062     Document Type: Article

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