Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4682-4686

  Han, Xiangyun ^a   Dai, Jiangnan ^a   Yu, Chenhui ^a   Wu, Zhihao ^a   Chen, Changqing ^a   Gao, Yihua ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

a Plane ZnO thin film; Photoluminescence; Pulsed laser deposition; Raman scattering; Transmission electron microscopy; X ray diffraction

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LATTICE MISMATCH; METALLIC FILMS; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

A-PLANE ZNO THIN FILMS; EPITAXIAL RELATIONSHIPS; INTERFACIAL MICROSTRUCTURE; LONGITUDINAL OPTICAL PHONONS; LOW TEMPERATURE PHOTOLUMINESCENCE; ORTHOGONAL DIRECTIONS; RESONANCE CONDITION; STRUCTURAL AND OPTICAL PROPERTIES;

PULSED LASERS;

EID: 77950587444     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.072     Document Type: Article

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