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Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

(8) Donoval, D a Chvala A a Sramaty R a Kovac J a Morvan, E b Dua, Ch b DiForte Poisson, M A b Kordos P a,c

a SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

b ALCATEL THALES III V LAB (France)

c INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT COMPONENT; DISLOCATION DENSITIES; EXPERIMENTAL DATA; GENERATION-RECOMBINATION; HIGHEST TEMPERATURE; MEASURED DATA; SCHOTTKY DIODES; TEMPERATURE RANGE; THERMIONIC EMISSION CURRENT; TRANSPORT MECHANISM; TUNNELING CURRENT;

DIODES; ELECTRON TUNNELING; LASERS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79953672633 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3560919 Document Type: Article

Times cited : (34)

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