The dislocation origin and model of excess tunnel current in GaP p-n structures

Semiconductors

Volumn 34, Issue 11, 2000, Pages 1305-1310

  Evstropov, V V ^a   Dzhumaeva, M ^b   Zhilyaev, Yu V ^a   Nazarov, N ^b   Sitnikova, A A ^a   Fedorov, L M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Academy of Sciences of Turkmenistan   (Turkmenistan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034310834     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1325428     Document Type: Article

References (20)

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