메뉴 건너뛰기




Volumn 142, Issue 1, 2009, Pages 175-178

Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes

Author keywords

Ga face GaN; Ga polar GaN; GaN Schottky diodes; Hydrogen sensors; N face GaN; N polar GaN

Indexed keywords

GA-FACE GAN; GA-POLAR GAN; GAN SCHOTTKY DIODES; HYDROGEN SENSORS; N-FACE GAN; N-POLAR GAN;

EID: 70349249289     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.07.040     Document Type: Article
Times cited : (23)

References (20)
  • 1
    • 0000235794 scopus 로고
    • Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures
    • Baranzahi A., Lloyd Spetz A., and Lundström I. Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures. Appl. Phys. Lett. 67 (1995) 3203-3205
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3203-3205
    • Baranzahi, A.1    Lloyd Spetz, A.2    Lundström, I.3
  • 3
    • 0032632726 scopus 로고    scopus 로고
    • High temperature Pt Schottky diode gas sensors on n-type GaN
    • Luther B.P., Wolter S.D., and Mohney S.E. High temperature Pt Schottky diode gas sensors on n-type GaN. Sens. Actuators B 56 (1999) 164-168
    • (1999) Sens. Actuators B , vol.56 , pp. 164-168
    • Luther, B.P.1    Wolter, S.D.2    Mohney, S.E.3
  • 8
    • 0037415829 scopus 로고    scopus 로고
    • Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes
    • Kim J., Ren F., Gila B., Abernathy C.R., and Pearton S.J. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. Appl. Phys. Lett. 82 (2003) 739-741
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 739-741
    • Kim, J.1    Ren, F.2    Gila, B.3    Abernathy, C.R.4    Pearton, S.J.5
  • 13
    • 9744284193 scopus 로고    scopus 로고
    • Strong affinity of hydrogen for the GaN(000-1) surface: implications for molecular beam epitaxy and metalorganic chemical vapor deposition
    • Northrup J.E., and Neugebauer J. Strong affinity of hydrogen for the GaN(000-1) surface: implications for molecular beam epitaxy and metalorganic chemical vapor deposition. Appl. Phys. Lett. 85 (2004) 3429-3431
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 3429-3431
    • Northrup, J.E.1    Neugebauer, J.2
  • 14
    • 0035540217 scopus 로고    scopus 로고
    • Influence of polarity on surface reaction between GaN{0 0 0 1} and hydrogen
    • Mayumi M., Satoh F., Kumagai Y., Takemoto K., and Koukitu A. Influence of polarity on surface reaction between GaN{0 0 0 1} and hydrogen. Phys. Status Solidi B 228 (2001) 537-541
    • (2001) Phys. Status Solidi B , vol.228 , pp. 537-541
    • Mayumi, M.1    Satoh, F.2    Kumagai, Y.3    Takemoto, K.4    Koukitu, A.5
  • 18
    • 34547567599 scopus 로고    scopus 로고
    • Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors
    • Miyoshi M., Kuraoka Y., Asai K., Shibata T., and Tanaka M. Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors. J. Vac. Sci. Technol. B 25 (2007) 1231-1235
    • (2007) J. Vac. Sci. Technol. B , vol.25 , pp. 1231-1235
    • Miyoshi, M.1    Kuraoka, Y.2    Asai, K.3    Shibata, T.4    Tanaka, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.