-
1
-
-
0000235794
-
Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures
-
Baranzahi A., Lloyd Spetz A., and Lundström I. Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures. Appl. Phys. Lett. 67 (1995) 3203-3205
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3203-3205
-
-
Baranzahi, A.1
Lloyd Spetz, A.2
Lundström, I.3
-
2
-
-
18044401404
-
SiC based field effect gas sensors for industrial applications
-
Lloyd Spetz A., Unéus L., Svenningstorp H., Tobias P., Ekedahl L.-G., Larsson O., Göras A., Savage S., Harris C., Mårtensson P., Wigren R., Salomonsson P., Häggendahl B., Ljung P., Mattsson M., and Lundström I. SiC based field effect gas sensors for industrial applications. Phys. Status Solidi A 185 (2001) 15-25
-
(2001)
Phys. Status Solidi A
, vol.185
, pp. 15-25
-
-
Lloyd Spetz, A.1
Unéus, L.2
Svenningstorp, H.3
Tobias, P.4
Ekedahl, L.-G.5
Larsson, O.6
Göras, A.7
Savage, S.8
Harris, C.9
Mårtensson, P.10
Wigren, R.11
Salomonsson, P.12
Häggendahl, B.13
Ljung, P.14
Mattsson, M.15
Lundström, I.16
-
3
-
-
0032632726
-
High temperature Pt Schottky diode gas sensors on n-type GaN
-
Luther B.P., Wolter S.D., and Mohney S.E. High temperature Pt Schottky diode gas sensors on n-type GaN. Sens. Actuators B 56 (1999) 164-168
-
(1999)
Sens. Actuators B
, vol.56
, pp. 164-168
-
-
Luther, B.P.1
Wolter, S.D.2
Mohney, S.E.3
-
5
-
-
0037146562
-
Gas sensitive GaN/AlGaN-heterostructures
-
Schalwig J., Muller G., Eickhoff M., Ambacher O., and Stutzmann M. Gas sensitive GaN/AlGaN-heterostructures. Sens. Actuators B 87 (2002) 425-430
-
(2002)
Sens. Actuators B
, vol.87
, pp. 425-430
-
-
Schalwig, J.1
Muller, G.2
Eickhoff, M.3
Ambacher, O.4
Stutzmann, M.5
-
6
-
-
79956017759
-
Hydrogen response mechanism of Pt-GaN Schottky diodes
-
Schalwig J., Müller G., Karrer U., Eickhoff M., Ambacher O., Stutzmann M., Görgens L., and Dollinger G. Hydrogen response mechanism of Pt-GaN Schottky diodes. Appl. Phys. Lett. 80 (2002) 1222-1224
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 1222-1224
-
-
Schalwig, J.1
Müller, G.2
Karrer, U.3
Eickhoff, M.4
Ambacher, O.5
Stutzmann, M.6
Görgens, L.7
Dollinger, G.8
-
7
-
-
4744348261
-
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures-Part B: sensor applications
-
Eickhoff M., Schalwig J., Steinhoff G., Weidmann O., Gorgens L., Neuberger R., Hermann M., Baur B., Muller G., Ambacher O., and Stutzmann M. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures-Part B: sensor applications. Phys. Status Solidi C (2003) 1908-1918
-
(2003)
Phys. Status Solidi C
, pp. 1908-1918
-
-
Eickhoff, M.1
Schalwig, J.2
Steinhoff, G.3
Weidmann, O.4
Gorgens, L.5
Neuberger, R.6
Hermann, M.7
Baur, B.8
Muller, G.9
Ambacher, O.10
Stutzmann, M.11
-
8
-
-
0037415829
-
Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes
-
Kim J., Ren F., Gila B., Abernathy C.R., and Pearton S.J. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes. Appl. Phys. Lett. 82 (2003) 739-741
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 739-741
-
-
Kim, J.1
Ren, F.2
Gila, B.3
Abernathy, C.R.4
Pearton, S.J.5
-
9
-
-
0037408989
-
Hydrogen-sensitive GaN Schottky diodes
-
Kim J., Gila B., Chung G.Y., Abernathy C.R., Pearton S.J., and Ren F. Hydrogen-sensitive GaN Schottky diodes. Solid-State Electron. 47 (2003) 1069-1073
-
(2003)
Solid-State Electron.
, vol.47
, pp. 1069-1073
-
-
Kim, J.1
Gila, B.2
Chung, G.Y.3
Abernathy, C.R.4
Pearton, S.J.5
Ren, F.6
-
10
-
-
28344438627
-
Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors
-
172105-1-172105-3
-
Wang H.T., Kang B.S., Ren F., Fitch R.C., Gillespie J., Moser N., Jessen G., Dettmer R., Gila B.P., Abernathy C.R., and Pearton S.J. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 87 (2005) 172105-1-172105-3
-
(2005)
Appl. Phys. Lett.
, vol.87
-
-
Wang, H.T.1
Kang, B.S.2
Ren, F.3
Fitch, R.C.4
Gillespie, J.5
Moser, N.6
Jessen, G.7
Dettmer, R.8
Gila, B.P.9
Abernathy, C.R.10
Pearton, S.J.11
-
11
-
-
0001590229
-
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
-
Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F., Dimitrov R., Wittmer L., Stutzmann M., Reiger W., and Hilsenbeck J. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85 (1999) 3222-3233
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 3222-3233
-
-
Ambacher, O.1
Smart, J.2
Shealy, J.R.3
Weimann, N.G.4
Chu, K.5
Murphy, M.6
Schaff, W.J.7
Eastman, L.F.8
Dimitrov, R.9
Wittmer, L.10
Stutzmann, M.11
Reiger, W.12
Hilsenbeck, J.13
-
13
-
-
9744284193
-
Strong affinity of hydrogen for the GaN(000-1) surface: implications for molecular beam epitaxy and metalorganic chemical vapor deposition
-
Northrup J.E., and Neugebauer J. Strong affinity of hydrogen for the GaN(000-1) surface: implications for molecular beam epitaxy and metalorganic chemical vapor deposition. Appl. Phys. Lett. 85 (2004) 3429-3431
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3429-3431
-
-
Northrup, J.E.1
Neugebauer, J.2
-
14
-
-
0035540217
-
Influence of polarity on surface reaction between GaN{0 0 0 1} and hydrogen
-
Mayumi M., Satoh F., Kumagai Y., Takemoto K., and Koukitu A. Influence of polarity on surface reaction between GaN{0 0 0 1} and hydrogen. Phys. Status Solidi B 228 (2001) 537-541
-
(2001)
Phys. Status Solidi B
, vol.228
, pp. 537-541
-
-
Mayumi, M.1
Satoh, F.2
Kumagai, Y.3
Takemoto, K.4
Koukitu, A.5
-
15
-
-
70349261779
-
-
212108-1-212108-3
-
Yu-Lin Wang F., Ren U., Zhang Q., Sun C.D., Yerino T.S., Ko Y.S., Cho I.H., Lee J., Han S.J., and Pearton. Appl. Phys. Lett. 94 (2009) 212108-1-212108-3
-
(2009)
Appl. Phys. Lett.
, vol.94
-
-
Yu-Lin Wang, F.1
Ren, U.2
Zhang, Q.3
Sun, C.D.4
Yerino, T.S.5
Ko, Y.S.6
Cho, I.H.7
Lee, J.8
Han, S.J.9
Pearton10
-
16
-
-
65749090410
-
N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
-
Sun Q., Cho Y.S., Kong B.H., Cho H.K., Ko T.S., Yerino C.D., Lee I.-H., and Han J. N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition. J. Cryst. Growth 311 (2009) 2948-2952
-
(2009)
J. Cryst. Growth
, vol.311
, pp. 2948-2952
-
-
Sun, Q.1
Cho, Y.S.2
Kong, B.H.3
Cho, H.K.4
Ko, T.S.5
Yerino, C.D.6
Lee, I.-H.7
Han, J.8
-
17
-
-
53349175303
-
Nitrogen-polar GaN growth evolution on c-plane sapphire
-
131912-1-131912-3
-
Sun Q., Cho Y.S., Lee I.-H., Han J., Kong B.H., and Cho H.K. Nitrogen-polar GaN growth evolution on c-plane sapphire. Appl. Phys. Lett. 93 (2008) 131912-1-131912-3
-
(2008)
Appl. Phys. Lett.
, vol.93
-
-
Sun, Q.1
Cho, Y.S.2
Lee, I.-H.3
Han, J.4
Kong, B.H.5
Cho, H.K.6
-
18
-
-
34547567599
-
Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors
-
Miyoshi M., Kuraoka Y., Asai K., Shibata T., and Tanaka M. Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors. J. Vac. Sci. Technol. B 25 (2007) 1231-1235
-
(2007)
J. Vac. Sci. Technol. B
, vol.25
, pp. 1231-1235
-
-
Miyoshi, M.1
Kuraoka, Y.2
Asai, K.3
Shibata, T.4
Tanaka, M.5
-
19
-
-
48849116251
-
Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode
-
024515-1-024515-6
-
Tsai Y.Y., Lin K.W., Chen H.I., Liu I.P., Hung C.W., Chen T.P., Tsai T.H., Chen L.Y., Chu K.Y., and Liu W.C. Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode. J. Appl. Phys. 104 (2008) 024515-1-024515-6
-
(2008)
J. Appl. Phys.
, vol.104
-
-
Tsai, Y.Y.1
Lin, K.W.2
Chen, H.I.3
Liu, I.P.4
Hung, C.W.5
Chen, T.P.6
Tsai, T.H.7
Chen, L.Y.8
Chu, K.Y.9
Liu, W.C.10
-
20
-
-
0003884869
-
-
CRC Press Inc.S-117, Boca Raton, FL
-
Shackelford J.F., Alexander W., and Park J.S. CRC Materials Science and Engineering handbook. 2nd ed. (1992), CRC Press Inc.S-117, Boca Raton, FL
-
(1992)
CRC Materials Science and Engineering handbook. 2nd ed.
-
-
Shackelford, J.F.1
Alexander, W.2
Park, J.S.3
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