Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Fang, Z Q ^a,b   Farlow, G C ^a   Claflin, B ^a,b   Look, D C ^a,b   Green, D S ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Aerospace and Defense   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; BEFORE AND AFTER; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; ELECTRICAL PROPERTY; ELECTRON CAPTURE; FORWARD BIAS; GAN BUFFER; GAN LAYERS; MEV-ELECTRONS; NEGATIVE SHIFT; PINCH-OFF REGION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TUNNELING CONDUCTION;

ACTIVATION ENERGY; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; IRRADIATION; LEAKAGE CURRENTS; RADIATION; SEMICONDUCTING GALLIUM; THRESHOLD VOLTAGE;

SCHOTTKY BARRIER DIODES;

EID: 67650242104     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151952     Document Type: Conference Paper

References (14)

1. X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. W. Dettmer, IEEE Trans. Nucl. Sci. 0018-9499 51, 293 (2004). 10.1109/TNS.2004.825077
2. G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmodt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, and G. Tränkle, Solid-State Electron. 0038-1101 52, 1011 (2008). 10.1016/j.sse.2008.02.005
3. J. W. McClory, J. C. Petrosky, J. M. Sattler, and T. A. Jarzen, IEEE Trans. Nucl. Sci. 0018-9499 54, 1946 (2007). 10.1109/TNS.2007.910121
4. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, A. V. Osinsky, P. P. Chow, N. G. Kolin, V. M. Boiko, and D. I. Merkurisov, Appl. Phys. Lett. 0003-6951 93, 152101 (2008). 10.1063/1.3000613
5. D. S. Green, S. R. Gibb, B. Hosse, R. Vetury, D. E. Grider, and J. A. Smart, J. Cryst. Growth 0022-0248 272, 285 (2004). 10.1016/j.jcrysgro.2004.08. 129
6. H. Zhang, E. J. Miller, and E. T. Yu, J. Appl. Phys. 0021-8979 99, 023703 (2006). 10.1063/1.2159547
7. T. Hashizume, J. Kotani, and H. Hasegawa, Appl. Phys. Lett. 0003-6951 84, 4884 (2004). 10.1063/1.1762980
8. J. Kotani, M. Tajima, S. Kasai, and T. Hashizume, Appl. Phys. Lett. 0003-6951 91, 093501 (2007). 10.1063/1.2775834
9. P. Kordoš, D. Donoval, M. Florovič, J. Kováč, and D. Gregušová, Appl. Phys. Lett. 0003-6951 92, 152113 (2008). 10.1063/1.2911727
10. Z. -Q. Fang, D. C. Look, and L. Polenta, J. Phys.: Condens. Matter 0953-8984 14, 13601 (2002).
11. Z. -Q. Fang, D. C. Look, D. H. Kim, and I. Adesida, Appl. Phys. Lett. 0003-6951 87, 182115 (2005). 10.1063/1.2126145
12. Z. -Q. Fang, G. Farlow, B. Claflin, and D. C. Look, Proceedings of 13th International Conference on Semiconducting and Insulating Materials, Beijing, China, edited by, Z. G. Wang, Y. H. Chen, and, X. L. Ye, (IEEE, Piscataway, NJ, 2004), pp. 29-36.
13. D. C. Look, Z. -Q. Fang, and B. Claflin, J. Cryst. Growth 0022-0248 281, 143 (2005). 10.1016/j.jcrysgro.2005.03.035
14. L. Polenta, Z. -Q. Fang, and D. C. Look, Appl. Phys. Lett. 0003-6951 76, 2086 (2000). 10.1063/1.126263