High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Journal of Physics D: Applied Physics

Volumn 44, Issue 15, 2011, Pages

  Seo, Yujeong ^a   An, Ho Myoung ^a   Kim, Hee Dong ^a   Hwang, In Rok ^b   Hong, Sa Hwan ^b   Park, Bae Ho ^b   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT; FAST SWITCHING; GATE INJECTION; HIGH-SPEED; INTERFACE STATE; LOW-VOLTAGE; MEMORY WINDOW; NON-VOLATILE MEMORIES; OPERATION VOLTAGE; PROGRAM/ERASE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; TUNNEL JUNCTIONS;

FLASH MEMORY;

EID: 79953646833     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/15/155105     Document Type: Article

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