-
2
-
-
0024870476
-
A new flash erase EEPROM cell with a sidewall select-gate on its source side
-
Naruke K., Yamada S., Obi E., Taguchi S., and Wada M. A new flash erase EEPROM cell with a sidewall select-gate on its source side. IEDM Tech Dig (1989) 603-606
-
(1989)
IEDM Tech Dig
, pp. 603-606
-
-
Naruke, K.1
Yamada, S.2
Obi, E.3
Taguchi, S.4
Wada, M.5
-
4
-
-
0032255807
-
Low voltage, low current, high speed program step split-gate cell with ballistic direct injection for EEPROM/flash
-
Ogura S., Hori A., Kato J., Yamanaka M., Odanaka S., Fujimoto H., et al. Low voltage, low current, high speed program step split-gate cell with ballistic direct injection for EEPROM/flash. IEDM Tech Dig (1998) 987-990
-
(1998)
IEDM Tech Dig
, pp. 987-990
-
-
Ogura, S.1
Hori, A.2
Kato, J.3
Yamanaka, M.4
Odanaka, S.5
Fujimoto, H.6
-
5
-
-
3342964427
-
High SCR design for one-transistor split-gate full-featured EEPROM
-
Chu W.T., Lin H.H., Wang Y.H., Hsieh C.T., Sung H.C., Lin Y.T., et al. High SCR design for one-transistor split-gate full-featured EEPROM. IEEE Elect Dev Lett 25 (2004) 498-500
-
(2004)
IEEE Elect Dev Lett
, vol.25
, pp. 498-500
-
-
Chu, W.T.1
Lin, H.H.2
Wang, Y.H.3
Hsieh, C.T.4
Sung, H.C.5
Lin, Y.T.6
-
6
-
-
0028602570
-
A novel high density contactless Flash memory array using split-gate source-side-injection cell for 5 V-only applications
-
Ma Y., Pang C.S., Pathak J., Tsao S.C., Chang C.F., Yamauchi Y., et al. A novel high density contactless Flash memory array using split-gate source-side-injection cell for 5 V-only applications. Symp VLSI Tech Dig (1994) 49-50
-
(1994)
Symp VLSI Tech Dig
, pp. 49-50
-
-
Ma, Y.1
Pang, C.S.2
Pathak, J.3
Tsao, S.C.4
Chang, C.F.5
Yamauchi, Y.6
-
7
-
-
0141538331
-
2 for high density embedded nonvolatile memory applications
-
2 for high density embedded nonvolatile memory applications. Symp VLSI Tech Dig (2003) 93-94
-
(2003)
Symp VLSI Tech Dig
, pp. 93-94
-
-
Lee, K.H.1
Kin, Y.C.2
-
8
-
-
58349104911
-
-
The International Technology Roadmap for Semiconductors (ITRS); 2006.
-
The International Technology Roadmap for Semiconductors (ITRS); 2006.
-
-
-
-
10
-
-
0032599208
-
A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well
-
Chi M.H., Chen C.M., Hung C.W., and Wang Y.H. A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well. Symp VLSI Tech Dig (1999) 199-200
-
(1999)
Symp VLSI Tech Dig
, pp. 199-200
-
-
Chi, M.H.1
Chen, C.M.2
Hung, C.W.3
Wang, Y.H.4
|