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Volumn 53, Issue 2, 2009, Pages 124-126

A novel vertical channel self-aligned split-gate flash memory

Author keywords

Flash memory; Floating gate; High density; Low power; Split gate; Vertical channel

Indexed keywords


EID: 58349098756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.11.014     Document Type: Letter
Times cited : (2)

References (10)
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    • Naruke, K.1    Yamada, S.2    Obi, E.3    Taguchi, S.4    Wada, M.5
  • 4
    • 0032255807 scopus 로고    scopus 로고
    • Low voltage, low current, high speed program step split-gate cell with ballistic direct injection for EEPROM/flash
    • Ogura S., Hori A., Kato J., Yamanaka M., Odanaka S., Fujimoto H., et al. Low voltage, low current, high speed program step split-gate cell with ballistic direct injection for EEPROM/flash. IEDM Tech Dig (1998) 987-990
    • (1998) IEDM Tech Dig , pp. 987-990
    • Ogura, S.1    Hori, A.2    Kato, J.3    Yamanaka, M.4    Odanaka, S.5    Fujimoto, H.6
  • 6
    • 0028602570 scopus 로고
    • A novel high density contactless Flash memory array using split-gate source-side-injection cell for 5 V-only applications
    • Ma Y., Pang C.S., Pathak J., Tsao S.C., Chang C.F., Yamauchi Y., et al. A novel high density contactless Flash memory array using split-gate source-side-injection cell for 5 V-only applications. Symp VLSI Tech Dig (1994) 49-50
    • (1994) Symp VLSI Tech Dig , pp. 49-50
    • Ma, Y.1    Pang, C.S.2    Pathak, J.3    Tsao, S.C.4    Chang, C.F.5    Yamauchi, Y.6
  • 7
    • 0141538331 scopus 로고    scopus 로고
    • 2 for high density embedded nonvolatile memory applications
    • 2 for high density embedded nonvolatile memory applications. Symp VLSI Tech Dig (2003) 93-94
    • (2003) Symp VLSI Tech Dig , pp. 93-94
    • Lee, K.H.1    Kin, Y.C.2
  • 8
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    • The International Technology Roadmap for Semiconductors (ITRS); 2006.
    • The International Technology Roadmap for Semiconductors (ITRS); 2006.
  • 10
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    • A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well
    • Chi M.H., Chen C.M., Hung C.W., and Wang Y.H. A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well. Symp VLSI Tech Dig (1999) 199-200
    • (1999) Symp VLSI Tech Dig , pp. 199-200
    • Chi, M.H.1    Chen, C.M.2    Hung, C.W.3    Wang, Y.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.