A novel self-aligned highly reliable sidewall split-gate flash memory

IEEE Transactions on Electron Devices

Volumn 53, Issue 3, 2006, Pages 465-473

  Cho, Caleb Yu Sheng ^a   Chen, Ming Jer ^b   Chen, Chiou Feng ^c   Tuntasood, Prateep ^c   Fan, Der Tsyr ^a   Liu, Tseng Yi ^a  

^a Actrans System Inc   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Actrans System Inc   (United States)

Author keywords

Flash memory; MOSFETs; NAND; NOR; Over erase; Poly erase; Sidewall; Source side injection; Split gate

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELDS; GATES (TRANSISTOR); MOSFET DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

FLOATING-GATE; MANUFACTURING PROCESS; OVER-ERASE; POLY ERASE; SOURCE-SIDE INJECTION; SPLIT-GATE FLASH MEMORY CELL;

FLASH MEMORY;

EID: 33244486085     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.863764     Document Type: Article

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