Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 2, 2010, Pages 295-300

  Kim, Hee Dong ^a   An, Ho Myoung ^a   Seo, Yujeong ^a   Zhang, Yongjie ^a   Geun Kim, Tae ^a  

^a Korea University   (South Korea)

Author keywords

Flash memory; metal alumina nitride oxide silicon (MANOS); negative bias (NB) temperature instabilities (NBTIs); passivation effect; positive bias (PB) temperature instabilities (PBTIs); postannealing

Indexed keywords

NEGATIVE-BIAS (NB) TEMPERATURE INSTABILITIES (NBTIS); PASSIVATION EFFECT; POSITIVE-BIAS (PB) TEMPERATURE INSTABILITIES (PBTIS); POST ANNEALING; TEMPERATURE INSTABILITY;

CAPACITANCE; CAPACITORS; HYDROGEN; METAL ANALYSIS; NITRIDES; PASSIVATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON COMPOUNDS; SILICON OXIDES; TUNNELING (EXCAVATION);

FLASH MEMORY;

EID: 77953284142     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2036248     Document Type: Article

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